Semiconductor Trench Capacitor and Resistor with Differential Linewidth
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Solution Overview
Problem
There is a need to reduce the dimensions of semiconductor devices while maintaining or increasing performance, particularly in the context of deep trench capacitors and resistors used in system-on-chip circuits, where existing designs struggle to achieve efficient integration and performance enhancement.
Innovation Solution
The development of semiconductor structures that include a trench capacitor with a narrower linewidth than the trench resistor, where the resistor material layer contacts the conductor region but does not fully cover it, and a conductor material layer that incompletely fills the resistor trench, allowing for separate fabrication and integration of capacitors and resistors on a single substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If deep trench capacitors and deep trench resistors are implemented with dimensions from 100 to 200 nanometers and depths from 5 to 10 microns, then device integration is achieved, but device performance requirements cannot be met as dimensions decrease
Solution Approach 1:
The patent divides the fabrication process into separate sequential steps for forming capacitor trenches and resistor trenches, rather than attempting to form both simultaneously. This segmentation allows each structure to be optimized independently for its specific performance requirements while maintaining compatibility with system-on-chip integration goals.
Solution Approach 2:
The patent applies different linewidth dimensions to different structures: capacitor trenches have a first linewidth dimension while resistor trenches have a second linewidth dimension. This local differentiation allows each component to be sized appropriately for its function, with capacitors optimized for capacitance density and resistors optimized for resistance control, thereby maintaining performance as overall device dimensions decrease.
2Ease of manufacture
If capacitor trench and resistor trench are formed with the same linewidth dimension, then fabrication process is simplified, but device performance and functionality are compromised
Solution Approach 1:
The fabrication process is segmented into distinct sequential operations: first forming capacitor trenches with a specific linewidth, then forming resistor trenches with a different linewidth. This segmentation resolves the contradiction by allowing different dimensions without requiring complex simultaneous patterning, thus maintaining ease of manufacture while achieving performance optimization.
Solution Approach 2:
The capacitor trenches are formed in advance before the resistor trenches. This preliminary action allows the capacitor structure to be established with its optimal dimensions first, then the resistor structure can be subsequently formed with its own optimal dimensions, avoiding the need for complex simultaneous patterning while ensuring both structures achieve their required performance characteristics.
3Stability of the object's composition
If conductor material layer completely fills resistor trench, then conductor region is fully covered, but resistor material layer cannot contact conductor region for proper resistor functionality
Solution Approach 1:
The conductor material layer is applied in a controlled manner to cover only a portion of the conductor region within the resistor trench, rather than completely filling it. This partial action allows the resistor material layer to contact the exposed conductor region, ensuring proper resistor functionality while still providing sufficient conductor coverage for electrical connection. The principle of partial action resolves the contradiction by finding the optimal intermediate state between full coverage and no coverage.
Data Source
AI summary
A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor structure. In a first instance, the capacitor trench has a linewidth dimension narrower than the resistor trench. The trench linewidth difference provides an efficient method for fabricating the trench capacitor and the trench resistor. In a second instance, the trench resistor comprises a conductor material at a periphery of the resistor trench and a resistor material at a central portion of the resistor trench.