Semiconductor Trench Layout for Channel Current Suppression
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Solution Overview
Problem
In semiconductor devices like Schottky barrier diodes, channel currents increase reverse current, necessitating a channel stopper, which complicates manufacturing and may result in uneven structures, making accurate channel current suppression challenging.
Innovation Solution
A semiconductor device design featuring an epitaxial layer with an insulating film, an active portion with a trench, and a channel current suppression portion with a trench and an EQR electrode, allowing for simultaneous trench formation without increasing manufacturing processes and ensuring accurate channel current suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a channel stopper is provided to prevent channel current, then channel current suppression is improved, but the number of manufacturing processes increases and cost increases
Solution Approach 1:
The patent combines the channel stopper formation with the existing active region trench formation process. The channel stopper is formed in the same trench as the active region, eliminating the need for separate manufacturing processes while maintaining effective channel current suppression.
Solution Approach 2:
The trench structure serves multiple functions: it acts as both the active region definition and the channel stopper formation location. This multi-functional approach allows a single process to achieve both active region isolation and channel current suppression.
2Reliability
If a channel stopper is provided to prevent channel current, then channel current suppression is improved, but manufacturing precision decreases due to process influences
Solution Approach 1:
By merging the channel stopper formation with the active region trench formation, the patent eliminates additional implant or diffusion processes that could cause structural unevenness. The single-process approach ensures more uniform and precise channel stopper formation.
3Reliability
If a channel stopper is provided to prevent channel current, then channel current suppression is improved, but manufacturing cost increases
Solution Approach 1:
The patent merges the channel stopper formation with the existing active region trench process, eliminating the need for additional manufacturing steps. This integration reduces manufacturing complexity and associated costs while maintaining effective channel current suppression.
Data Source
AI summary
[Problem] To provide a semiconductor device capable of suppressing a channel current without increasing manufacturing processes, and capable of accurately forming a channel current suppression structure. [Solution] A semiconductor device 1 according to the present invention includes: a substrate 10; an epitaxial layer 20 formed on the substrate 10; and an insulating film 35 provided on one surface 20a side of the epitaxial layer 20. An active portion 40 provided with a predetermined element and a channel current suppression portion 50 being at a termination portion 70 side and provided outside the active portion 40 are provided on the one surface 20a side of the epitaxial layer 20 via the insulating layer 35. The channel current suppression portion 50 is provided with a trench 51 for suppressing the channel current flowing from the active portion 40 to the termination portion 70.