Semiconductor Device Trench Control Electrodes Switching Loss
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Solution Overview
Problem
Current power control semiconductor devices face challenges in reducing switching loss, which affects their efficiency in power conversion applications.
Innovation Solution
The semiconductor device incorporates a specific structure with multiple electrodes and insulating films, along with strategically positioned semiconductor layers and control electrodes, to manage charge flow and reduce electron and hole densities, thereby minimizing switching losses during transitions between diode and IGBT modes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional power control semiconductor device structure is used, then device simplicity is maintained, but switching loss cannot be reduced
Solution Approach 1:
The semiconductor device is segmented into multiple functional regions including a drift region, a first doped region, a second doped region, and a third doped region. Each segment serves a specific function in charge control during switching transitions, allowing the device to reduce switching loss through distributed charge management rather than relying on a single structure.
Solution Approach 2:
Different doped regions are strategically positioned at specific locations within the semiconductor device to create local variations in electrical properties. The first doped region is located near the first electrode, the second doped region is positioned to control charge flow, and the third doped region is placed to manage hole density. This local differentiation enables precise control of charge distribution to minimize switching losses.
2Loss of energy
If charge flow is not optimized, then device structure remains simple, but recovery loss increases
Solution Approach 1:
The doped regions are pre-configured in specific positions and concentrations before the switching operation occurs. The first doped region is预先 doped to establish an initial charge distribution, the second doped region is positioned to facilitate charge extraction, and the third doped region is prepared to manage minority carrier removal. This preliminary configuration enables efficient charge management during switching transitions, reducing recovery loss.
3Productivity
If on-resistance is not optimized, then manufacturing remains simple, but power conversion efficiency decreases
Solution Approach 1:
The invention optimizes on-resistance by carefully controlling the doping parameters of multiple regions. The doping concentration, depth, and lateral distribution of the first, second, and third doped regions are precisely adjusted to minimize resistive losses during the on-state. This parameter optimization enables efficient power conversion while managing the increased structural complexity through systematic doping design.
Data Source
AI summary
A semiconductor device includes first and second electrode, a semiconductor part therebetween, and first and second control electrode. The first control electrode is provided in a first trench between the first electrode and the semiconductor part. The second control electrode is provided in a second trench between the second electrode and the semiconductor part. The semiconductor part includes first, third, fifth and sixth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The sixth layer is provided between the first layer and the second electrode. The second electrode is electrically connected to the first layer via a first-conductivity-region including the sixth layer.