Semiconductor Mounting Structure With Trench Creepage Isolation
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving compactness without compromising the dielectric strength of the wiring board, as reducing the spacing between electrodes lowers the dielectric strength.
Innovation Solution
The semiconductor device incorporates a substrate with specific sections that increase the creepage distance between electrodes, using a trench or ridge configuration to allow for reduced electrode spacing while maintaining dielectric strength, and employs a bonding layer and sealing resin to prevent short-circuiting and reinforce the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the spacing between the first electrode and the second electrode is reduced to make the semiconductor element more compact, then the compactness of the semiconductor element is improved, but the dielectric strength of the wiring board is reduced
Solution Approach 1:
The patent introduces a third dimension (depth/vertical direction) by forming trenches in the substrate beneath the wirings. This allows the creepage distance to be extended vertically rather than only horizontally, enabling reduced electrode spacing while maintaining dielectric strength through the combined horizontal and vertical creepage paths.
Solution Approach 2:
The substrate is segmented into multiple sections (first section, second section, and third section) by forming trenches between them. This segmentation creates distinct regions that force the creepage path to navigate through multiple segments, effectively increasing the total creepage distance between electrodes without increasing the horizontal footprint.
2Area of stationary object
If the spacing between wirings is reduced to accommodate closer electrodes, then the compactness is improved, but the creepage distance between wirings is reduced
Solution Approach 1:
The patent extends the creepage path into the vertical dimension by forming trenches that increase the depth component of the creepage distance. This allows reduced horizontal wiring spacing while maintaining adequate creepage distance through the combination of horizontal and vertical paths.
Solution Approach 2:
The substrate structure is locally modified by forming trenches specifically in regions where creepage distance needs to be increased. This creates areas with enhanced dielectric properties (increased creepage path) without affecting the overall wiring layout or requiring increases in the total device area.
Data Source
AI summary
A semiconductor device includes: a substrate with an obverse surface facing in a thickness direction; first and second wirings on the obverse surface; and a semiconductor element with a first electrode facing the obverse surface and an adjacent second electrode facing the obverse surface. The first electrode is electrically bonded to the first wiring, and the second electrode bonded to the second wiring. The substrate includes first, second and third sections, with the first section including a portion of the obverse surface and overlapping with the first wiring and first electrode as viewed in the thickness direction. The second section includes a portion of the obverse surface, overlapping with the second wiring and second electrode as viewed in the thickness direction. The third section, located between the first and the second sections as viewed in the thickness direction, includes a first surface with its normal direction intersecting the thickness direction.