Semiconductor Light-Emitting Device With Trench Electrodes
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Solution Overview
Problem
Conventional semiconductor light-emitting devices face challenges in light extraction efficiency due to the removal of a substantial portion of the active layer for electrode formation, which compromises the structural integrity and optical performance.
Innovation Solution
The semiconductor light-emitting device incorporates a semiconductor stack with depressions that expose the second semiconductor layer, allowing for the formation of contact structures and pad portions on the first surface while maintaining the active layer's integrity, enhancing light extraction efficiency through a patterned metal layer and insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a substantial portion of the active layer is removed to form electrodes, then the n-type electrode can be formed for wire bonding, but the light extraction efficiency is lowered
Solution Approach 1:
The patent introduces depressions that penetrate through the active layer to expose the n-type semiconductor layer, creating a vertical dimension for electrode contact. This allows the n-type electrode to contact the n-type semiconductor layer through the depression without requiring removal of the active layer surface, thus maintaining light extraction efficiency while enabling proper electrode formation for wire bonding
Solution Approach 2:
The patent applies local quality by forming depressions only in specific regions where electrode contact is needed, rather than removing the active layer globally. The depressions are strategically positioned to expose the n-type semiconductor layer locally, allowing electrode formation in those specific areas while preserving the active layer integrity in other regions for optimal light extraction
2Reliability
If the active layer is removed for electrode formation, then electrical connection is achieved, but the structural integrity of the active layer is compromised
Solution Approach 1:
The patent segments the electrode structure into multiple components: the n-type electrode, the depression structure, and the remaining active layer. The depression acts as a separate structural element that penetrates through the active layer to expose the n-type semiconductor layer, allowing electrical connection through the segmented path while maintaining the overall integrity of the active layer structure
Solution Approach 2:
The patent transitions from a planar electrode configuration to a three-dimensional structure with depressions penetrating vertically through the active layer. This dimensional change allows electrical contact to be established through the depth of the structure rather than by removing surface material, preserving the active layer's structural integrity while achieving reliable electrical connection
Data Source
AI summary
A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.