Semiconductor Trench Filling via Seed Layer Thermal Transformation
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable semiconductor device structures as feature sizes continue to decrease, making fabrication processes increasingly difficult due to the complexity of processing and manufacturing smaller and more complex circuits.
Innovation Solution
A method involving the formation of a dielectric layer, a barrier layer, a seed layer, and a conductive layer in a trench structure, followed by a thermal treatment process to transform the seed and conductive layers into a conductive layer with a reduced aspect ratio, facilitating the filling of a subsequent conductive layer and preventing voids in the conductive line, thereby improving yield and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency is improved and costs are lowered, but fabrication processes become increasingly difficult to perform
Solution Approach 1:
A seed layer is deposited in advance within the trench structure before forming the conductive layer. This preliminary action ensures that the trench walls are pre-coated with a material that facilitates subsequent conductive layer deposition and prevents void formation, addressing the fabrication difficulty associated with small feature sizes.
Solution Approach 2:
The invention changes the physical and chemical parameters of the trench structure by introducing a seed layer with specific material properties (composition, thickness, adhesion characteristics). This parameter modification enables better control over conductive layer formation, making the fabrication process more reliable at smaller dimensions.
2Reliability
If thermal treatment process is applied to melt and transform seed and conductive layers, then aspect ratio of trench is reduced and void formation is prevented, but additional processing steps are added
Solution Approach 1:
A thermal treatment process is applied to melt and transform the seed layer and conductive layer from solid to liquid and then back to solid phase. This phase transition reduces the aspect ratio of the trench and prevents void formation in the conductive line, thereby improving reliability despite adding a processing step.
3Device complexity
If conventional deposition methods are used without seed layer, then process steps are minimized, but voids form in conductive lines at small dimensions
Solution Approach 1:
A seed layer is deposited in advance within the trench structure before forming the conductive layer. This preliminary action ensures that the trench walls are pre-coated with a material that facilitates subsequent conductive layer deposition and prevents void formation, addressing the fabrication difficulty associated with small feature sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and yield of the conductive line by reducing the aspect ratio of the trench, preventing voids and improving the filling of the conductive layer, which is crucial for maintaining the integrity of smaller semiconductor device structures.
Implementation Method 1
perform a thermal treatment process to melt and transform the seed layer and the first conductive layer into a second conductive layer
Data Source
AI summary
In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer on a semiconductor substrate. The dielectric layer has at least one first trench in the dielectric layer. The method also includes forming a seed layer on a sidewall and a bottom surface of the first trench. The method further includes forming a first conductive layer on the seed layer. The method includes performing a thermal treatment process to melt and transform the seed layer and the first conductive layer into a second conductive layer. The method also includes forming a third conductive layer on the second conductive layer to fill the first trench.