Semiconductor Device Trench Gas Volume Sensor Stress Decoupling
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Solution Overview
Problem
Semiconductor devices with environmental sensors, such as pressure sensors, face accuracy issues due to additional stress induced after calibration, which can occur when incorporated into final products like mobile phones, and existing solutions like thick glue layers or ceramic substrates increase device thickness and footprint, not suitable for portable devices.
Innovation Solution
A semiconductor device design featuring a cap body and substrate body with a trench and gas volume surrounding the environmental sensor, decoupling it from stress, and a channel for gas permeability, reducing stress transfer and maintaining accuracy while minimizing package height and footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thick glue layers or thick ceramic substrates are used to avoid additional stress on the environmental sensor, then the sensor accuracy is improved, but the device thickness and footprint are increased
Solution Approach 1:
The device is segmented into a sensor component and a stress-absorbing component. The trench structure creates a decoupling region that separates the sensor from the substrate, allowing the substrate to be thin while still providing stress protection through the trench geometry rather than requiring thick protective layers.
Solution Approach 2:
The trench acts as an intermediary structure between the substrate and the sensor. It provides a mechanical decoupling function that protects the sensor from stress while maintaining a compact form factor, eliminating the need for thick glue layers or ceramic substrates as stress-protection intermediaries.
2Device complexity
If the environmental sensor is directly mounted on the substrate, then the device complexity is reduced, but additional stress is transferred to the sensor reducing accuracy
Solution Approach 1:
The direct mounting structure is segmented by introducing a trench that creates distinct functional zones: a sensor region and a stress-absorbing region. This segmentation allows the sensor to be mounted on the substrate while maintaining structural simplicity, as the trench is formed through standard semiconductor fabrication processes rather than requiring complex assembly steps.
Solution Approach 2:
The trench introduces local structural differentiation without changing the overall mounting approach. The substrate maintains its simple mounting function while the trench creates a localized stress-free zone around the sensor, providing protection without adding global structural complexity.
3Measurement precision
If additional stress protection structures are added to protect the environmental sensor, then the sensor accuracy is improved, but the package height is increased
Solution Approach 1:
Instead of adding protective structures in the vertical dimension (thick glue layers, thick substrates), the solution moves the stress protection function to the lateral dimension through the trench structure. The trench extends horizontally around the sensor, providing stress protection while maintaining a thin vertical profile suitable for portable devices.
Solution Approach 2:
The trench is filled with gas (air or other gas), creating a pneumatic cushioning effect that absorbs stress. This gas-filled trench provides stress protection without requiring solid protective layers, enabling thin-package construction while maintaining sensor accuracy.
Data Source
Figure 1A~1C
Figure 1D~1E
Figure 1F~1G
AI summary
A semiconductor device (10) comprises a cap body (11), an environmental sensor (12), a substrate body (13) and a first volume of gas (14). A trench (15) extends through at least a part of the substrate body (13) in a vertical direction (z), the trench (15) being connected to the first volume of gas (14) and the vertical direction (z) being perpendicular to lateral directions (x) that are parallel to the main plane of extension of the semiconductor device (10). Furthermore, a channel (16) connects the first volume of gas (14) and the trench (15) with the environment of the semiconductor device (10) such that the channel (16) is permeable for gases and the environmental sensor (12) and the first volume of gas (14) are arranged between the cap body (11) and the substrate body (13) in vertical direction (z).