Semiconductor Trench Structures for Heat Dissipation
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Solution Overview
Problem
Semiconductor devices face overheating issues due to inefficient heat dissipation, particularly in power device circuits where hot spots are generated, leading to potential malfunction or destruction.
Innovation Solution
The introduction of trench structures extending through the handling layer of the semiconductor die to the etch stop or circuit semiconductor layer, which act as heat dissipation structures and can be filled with thermally conductive materials to enhance heat transfer, while also allowing for bendability by filling with gases or elastic materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional semiconductor device structures are used, then manufacturing is simpler, but heat dissipation is inefficient leading to overheating
Solution Approach 1:
The semiconductor device structure is segmented by introducing trench structures that divide the handling layer into multiple regions. These trenches create a segmented architecture that enables improved heat dissipation pathways while maintaining manufacturing feasibility through standardized fabrication processes.
Solution Approach 2:
The patent introduces vertical trench structures extending through the handling layer, adding a vertical dimension to heat dissipation. This dimensional change allows heat to be conducted away from hot spots in the circuit semiconductor layer through the trenches to the backside of the device, creating three-dimensional heat management pathways.
2Adaptability or versatility
If rigid structures are used, then structural integrity is maintained, but flexibility is reduced
Solution Approach 1:
The handling layer is designed as a thin film structure with integrated trenches, allowing the device to achieve flexibility while maintaining structural integrity. The thin film nature of the handling layer combined with the trench architecture enables the device to be bent or conform to different surfaces without compromising the underlying circuit structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively dissipates heat from hot spots, preventing overheating and enabling the semiconductor device to be more flexible, thus expanding its application range.
Implementation Method 1
one or more trench structures extending through the handling layer of the semiconductor die, wherein the one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer
Data Source
AI summary
A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.


