Semiconductor Trench Structures for Heat Dissipation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices face overheating issues due to inefficient heat dissipation, particularly in power device circuits where hot spots are generated, leading to potential malfunction or destruction.

Innovation Solution

The introduction of trench structures extending through the handling layer of the semiconductor die to the etch stop or circuit semiconductor layer, which act as heat dissipation structures and can be filled with thermally conductive materials to enhance heat transfer, while also allowing for bendability by filling with gases or elastic materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If traditional semiconductor device structures are used, then manufacturing is simpler, but heat dissipation is inefficient leading to overheating

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The semiconductor device structure is segmented by introducing trench structures that divide the handling layer into multiple regions. These trenches create a segmented architecture that enables improved heat dissipation pathways while maintaining manufacturing feasibility through standardized fabrication processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces vertical trench structures extending through the handling layer, adding a vertical dimension to heat dissipation. This dimensional change allows heat to be conducted away from hot spots in the circuit semiconductor layer through the trenches to the backside of the device, creating three-dimensional heat management pathways.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If rigid structures are used, then structural integrity is maintained, but flexibility is reduced

Engineering Contradiction:
ImproveflexibilityVSAvoidstructural integrity
Core Design Contradiction:
Adaptability or versatilityVSStrength

Solution Approach 1:

The handling layer is designed as a thin film structure with integrated trenches, allowing the device to achieve flexibility while maintaining structural integrity. The thin film nature of the handling layer combined with the trench architecture enables the device to be bent or conform to different surfaces without compromising the underlying circuit structures.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively dissipates heat from hot spots, preventing overheating and enabling the semiconductor device to be more flexible, thus expanding its application range.

Implementation Method 1

one or more trench structures extending through the handling layer of the semiconductor die, wherein the one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS10535578B2Semiconductor devices, and a method for forming a semiconductor device
Publication Date: 2020.01.14 TAHOE RES LTD
  • US10535578B2 patent drawing
  • US10535578B2 patent drawing
  • US10535578B2 patent drawing

AI summary

A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.