Semiconductor Trench Structures for Interconnected Electrical Pathways
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Solution Overview
Problem
Current semiconductor manufacturing methods face challenges in creating complex structure patterns with trenches that are efficiently connected and integrated into semiconductor devices, particularly in forming effective electrical pathways and channel structures within these devices.
Innovation Solution
A method involving the formation of a base layer on a substrate, followed by alternating layers of insulating and sacrificial materials, where trenches and penetration portions are etched to create interconnected structure patterns, allowing for the integration of contact plugs and upper wiring layers, enabling efficient electrical connections and channel formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If complex structure patterns with multiple trenches are formed to enhance electrical connectivity and channel formation, then device performance and integration are improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The structure layer is divided into multiple trenches (first trench, second trench, third trench) with different orientations and functions. Each trench is segmented to serve specific purposes: first trench for electrical connection, second trench for channel formation, and third trench for additional connectivity. This segmentation allows complex electrical pathways to be created through systematic division rather than attempting to form all connections in a single complex structure.
Solution Approach 2:
Different regions of the structure pattern are assigned different properties and functions. The base pattern is formed with specific material composition and depth characteristics to provide localized electrical pathways. The trenches vary in depth, width, and material filling to create optimal local conditions for different electrical connection requirements. This local quality approach enables tailored electrical connectivity in different areas of the device.
2Adaptability or versatility
If multiple material layers are alternately stacked to form structure layers for creating trenches and channels, then structural functionality and electrical pathways are enhanced, but manufacturing process complexity increases
Solution Approach 1:
The structure layer is prepared in advance by alternately stacking conductive and insulating material layers before trench formation. This preliminary stacking creates a pre-configured structure that guides subsequent etching and filling processes. The conductive and insulating layers are deposited with specific thicknesses and material compositions that determine the final electrical pathways and channel structures, allowing complex functionality to be built through systematic layer-by-layer construction rather than post-processing modifications.
Solution Approach 2:
Multiple material layers are nested within each other to form the structure layer, with conductive layers embedded within insulating layers. This nested arrangement allows different functional materials to be integrated in a compact, organized manner. The conductive layers are positioned within the insulating matrix to create embedded electrical pathways, while the nested structure enables multiple functions (conduction, insulation, mechanical support) to be achieved within a single integrated layer system.
3Reliability
If trenches are formed to extend in multiple directions and connect at cross portions for creating electrical pathways, then electrical connectivity and channel formation are improved, but manufacturing precision requirements increase
Solution Approach 1:
A base pattern is formed as an intermediary structure at the cross portions where trenches intersect. This base pattern serves as a mediator that facilitates the connection between trenches extending in different directions. The base pattern is formed with specific material composition and depth to provide a reliable connection point, reducing the precision requirements for direct trench-to-trench alignment. The intermediary base pattern absorbs manufacturing variations and ensures consistent electrical connectivity at intersection points.
Solution Approach 2:
The trench structure is extended into the vertical dimension with varying depths, allowing trenches to connect at different levels rather than requiring precise planar alignment. The base pattern is formed at specific depth positions to create three-dimensional connection points. This dimensional approach transforms a two-dimensional alignment problem into a three-dimensional connection architecture, where trenches can intersect and connect through vertical positioning rather than requiring perfect horizontal alignment.
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a base layer on a substrate. A structure layer is Conned on the base layer. The structure layer includes at least one material layer. A structure pattern is formed on the base layer. The structure pattern includes a first trench extending in a first direction and a second trench having a cross portion extending in a second direction that is perpendicular to the first direction. The second trench is connected to the first trench. The structure pattern further includes a base pattern having a recess portion recessed downward from a surface of the base layer at the cross portion of the second trench.