Semiconductor Device Trench Intersection Threshold Voltage
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Solution Overview
Problem
The semiconductor device described in Patent Document 1 experiences variations in threshold voltages due to position-dependent gate electrode configurations, leading to instability in channel formation.
Innovation Solution
A semiconductor device with intersecting trenches on the semiconductor substrate, where the first trench is not in contact with the gate insulation film at the intersection, stabilizing the threshold voltage by avoiding the deep trench influence and ensuring uniform electron flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If trenches are arranged in an offset grid-like pattern, then device complexity is reduced and manufacturing is simplified, but threshold voltage stability deteriorates due to position-dependent variations
Solution Approach 1:
The patent applies local quality by creating a differentiated trench structure where intersection regions have deeper trenches compared to non-intersection regions. This local structural variation compensates for the position-dependent threshold voltage variations inherent in grid-like patterns, ensuring uniform threshold voltage across all transistor positions while maintaining the simplified offset grid arrangement.
Data Source
AI summary
The semiconductor device includes a gate insulation film covering inner surfaces of the first trench and the second trench, and an inner surface of an intersection, and a gate electrode provided in the first trench and the second trench, and facing the semiconductor substrate via the gate insulation film. Further, the semiconductor device includes an emitter region of an n-type provided in the semiconductor substrate, exposed on the front surface of the semiconductor substrate, being in contact with the gate insulation film in the second trench, and not being in contact with the gate insulation film provided on the inner surface of the intersection of the first trench and the second trench.