Semiconductor Trench Isolation Structure for Thin High-Power Substrates
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Solution Overview
Problem
High-power semiconductor devices require stringent quality and cost-effective manufacturing to meet safety standards in industrial and automotive applications, while existing methods face challenges in reducing semiconductor substrate thickness and maintaining device performance.
Innovation Solution
A method for manufacturing semiconductor features involving a semiconductor substrate with a dielectric structure, interconnecting structure, shallow and deep trench isolation, and conductive structures, where a carrier wafer is used to reduce substrate thickness, and dielectric and passivation layers are formed to optimize trench formation and conductive material placement, enabling efficient electrical connections and cost-effective production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the semiconductor substrate thickness is reduced to meet manufacturing cost and device performance requirements, then manufacturing cost decreases and device performance improves, but the structural strength and reliability of the substrate deteriorate
Solution Approach 1:
The substrate structure is segmented into multiple functional layers including the semiconductor substrate, device isolation layer, shallow trench isolation layer, and deep trench isolation layer. Each layer serves specific functions and can be independently optimized, allowing thin substrate design while maintaining overall structural integrity through the distributed support of multiple isolation layers.
Solution Approach 2:
The patent employs composite material structures combining semiconductor substrate with various dielectric materials (device isolation layer, shallow trench isolation layer, deep trench isolation layer) to create a multi-layer composite structure. This composite approach enables the thin substrate to maintain strength through the combined mechanical properties of different materials arranged in specific configurations.
2Reliability
If deep trench isolation structures are formed to improve device isolation and performance, then device reliability improves, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The isolation structure is segmented into device isolation layer, shallow trench isolation layer, and deep trench isolation layer, each formed through separate but standardized processes. This segmentation allows the complex isolation requirement to be divided into manageable steps, where each layer can be optimized independently while following similar fabrication methodologies.
Solution Approach 2:
The device isolation layer is formed first as a preliminary step before creating the shallow and deep trench isolation structures. This preliminary action establishes a foundation that simplifies subsequent trench formation processes, as the preliminary isolation layer provides a reference structure and reduces the complexity of later alignment and formation steps.
3Reliability
If multiple isolation layers and conductive structures are added to improve electrical connectivity and device performance, then device functionality improves, but manufacturing cost and process time increase
Solution Approach 1:
Multiple isolation functions (device isolation, shallow trench isolation, deep trench isolation) are merged into a unified multi-layer structure that serves all isolation requirements simultaneously. The conductive structures are integrated within this unified framework, allowing electrical connectivity to be achieved through the same structural platform rather than requiring separate additive processes.
Solution Approach 2:
The multi-layer isolation structure serves multiple functions: electrical isolation between devices, mechanical support for thin substrate, stress management, and alignment reference for subsequent processing. This multi-functionality reduces the need for separate structures, thereby decreasing overall manufacturing complexity and process time despite the enhanced functionality.
Data Source
AI summary
A semiconductor feature includes: a semiconductor substrate; a dielectric structure and a semiconductor device disposed on the semiconductor substrate; an interconnecting structure disposed in the dielectric structure and connected to the semiconductor device; an STI structure disposed in the semiconductor substrate and surrounding the semiconductor device; two DTI structures penetrating the semiconductor substrate and the STI structure and surrounding the semiconductor device; a passivation structure connected to the semiconductor substrate and the DTI structures and located opposite to the interconnecting structure; and a conductive structure surrounded by the passivation structure, penetrating the semiconductor substrate and the STI structure into the dielectric structure, located between the DTI structures and electrically connected to the semiconductor device via the interconnecting structure.