Semiconductor Light Emitting Device Trench Segmentation
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Solution Overview
Problem
Large-sized semiconductor light emitting elements experience reduced light extraction efficiency due to increased average distance of light travel and repeated reflections, leading to absorption of light at the interface between the substrate and semiconductor laminate, resulting in decreased intensity of emitted light.
Innovation Solution
The semiconductor laminate is divided into at least two regions by a trench penetrating the p-type and n-type semiconductor layers, with the trench width being smaller than the average particle diameter of fluorescent particles, allowing for improved light extraction and reduced deposition of fluorescent particles within the trenches, thereby enhancing light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the size of the semiconductor light emitting element is increased, then the number of elements that can be formed from one wafer is decreased, but the light extraction efficiency is also reduced due to increased average distance of light travel and repeated reflections
Solution Approach 1:
The semiconductor laminate is divided into a plurality of semiconductor regions by trenches, creating multiple smaller light emission zones within the large-sized element. This segmentation reduces the average distance light must travel to reach the side surface, decreasing the number of reflections and improving light extraction efficiency while maintaining the large overall element size for high wafer utilization
Solution Approach 2:
The invention creates non-uniform light extraction characteristics by introducing trenches at specific locations within the semiconductor laminate. The trenches are strategically positioned to create regions with different light extraction properties, optimizing the overall light extraction efficiency across the large-sized element by addressing local variations in light travel distance
2Illumination intensity
If fluorescent particles are used for wavelength conversion, then white light emission is achieved, but the particles may enter gaps between small-sized elements and interrupt emitted light, deteriorating light extraction efficiency
Solution Approach 1:
The invention extracts or removes the problematic gaps between elements by forming a continuous semiconductor laminate structure divided into regions. By eliminating the gaps where fluorescent particles could accumulate and interrupt light, the design allows fluorescent particles to be uniformly distributed in the resin without causing light interruption, thus maintaining both white light emission and light extraction efficiency
3Loss of energy
If the trench width is made larger to improve light extraction, then light extraction efficiency increases, but fluorescent particles can be deposited within the trenches, blocking light paths
Solution Approach 1:
The invention optimizes the trench width parameter to a specific range (0.1 μm to 10 μm) that balances two competing requirements: wide enough to improve light extraction efficiency by reducing light travel distance, but narrow enough to prevent deposition of fluorescent particles. This precise parameter control allows the system to achieve improved light extraction without the harmful effect of particle blockage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach shortens the average distance light travels, decreases the number of reflections, and suppresses fluorescent particle deposition, resulting in improved light extraction efficiency and uniform chromaticity with good white light balance.
Implementation Method 1
fluorescent particles for wavelength conversion
Implementation Method 2
The light reaching the side of the semiconductor laminate is emitted toward the outside of the element. In a large-sized semiconductor light emitting element, the average distance traveled by the light until it reaches the side of the semiconductor light emitting element becomes long, which increases the number of the reflections of the light before it is emitted from the light emitting element
Data Source
Figure 1A
Figure 1B
Figure 1C
AI summary
To provide a semiconductor light emitting device using a large-sized laminated semiconductor light emitting element with improved light extraction efficiency. The semiconductor light emitting device 90 of the present invention includes a semiconductor light emitting element 1 having a semiconductor laminate 40 including a p-type semiconductor layer 43, an active layer 42 and an n-type semiconductor layer 41 sequentially laminated, and a conductive support substrate 10 joined to the p-type semiconductor layer 43 side of the semiconductor laminate 40; a transparent sealing resin 92 covering the semiconductor laminate 40; and fluorescent particles 93 contained in the transparent sealing resin 92. The semiconductor laminate 40 is divided into at least two semiconductor regions 45a to 45d by trenches 2 penetrating the p-type semiconductor layer 43, the active layer 42, and the n-type semiconductor layer 41. The width W of the trench 2 is smaller than the average particle diameter of the fluorescent particle 93.