Semiconductor Trench Filling with Multi-Step Coating and Heating
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Solution Overview
Problem
The challenge in semiconductor manufacturing is filling narrow trenches with suitable materials in a void-free and seam-free manner, especially as critical dimensions shrink, making existing methods ineffective for small dimensions.
Innovation Solution
A method involving multiple coating and heating steps using a diluted solution containing a metal-containing solute, such as hafnium compounds, applied in a semiconductor structure to form films with minimal shrinkage and voids, including a multi-step heating process and UV light treatment to ensure complete solvent removal and crystallization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional filling methods are used for narrow trenches, then the filling process becomes increasingly difficult, but the requirement for void-free and seam-free filling remains critical
Solution Approach 1:
The filling process is segmented into multiple coating steps with intermediate heating treatments. Each coating step deposits a thin layer that is then heated to remove solvent and promote consolidation, preventing void formation. This segmented approach enables precise control over the filling process for narrow trenches while maintaining void-free quality.
Solution Approach 2:
The method applies preliminary heating treatments between coating steps to remove solvent and promote film consolidation before subsequent coating layers are applied. This preliminary action prevents void formation early in the process, ensuring the foundation for void-free and seam-free filling is established before the trench is completely filled.
2Manufacturing precision
If multiple coating and heating steps are used to fill trenches, then film quality improves with minimal shrinkage and voids, but process complexity increases
Solution Approach 1:
The method systematically changes processing parameters including temperature, coating thickness, and heating duration across multiple steps. Each parameter is optimized to achieve specific outcomes: controlled solvent removal, minimal film shrinkage, and void elimination. These parameter changes improve film quality while the systematic nature of the changes provides a repeatable process framework.
Solution Approach 2:
The multiple coating and heating steps create a continuous process where each step builds upon the previous one. The heating treatments continuously remove solvent and promote consolidation, while subsequent coating steps continuously add material. This continuous useful action ensures progressive film quality improvement without interrupting the filling process.
3Stability of the object's composition
If diluted solution with metal-containing solute is used, then films exhibit superior thermal stability and etch resistance, but the number of steps required to achieve complete filling increases
Solution Approach 1:
The method employs periodic cycles of coating followed by heating treatment. Each cycle deposits a thin layer of the diluted metal-containing solution and then removes solvent through controlled heating. This periodic action allows the use of diluted solutions (which provide superior thermal stability and etch resistance) while managing the total filling time through efficient cycling rather than requiring a single long-duration process.
Solution Approach 2:
The heating steps induce phase transitions in the solvent, transforming it from liquid to vapor for complete removal. This phase transition is critical for achieving void-free films using diluted solutions. By controlling the heating parameters, the method efficiently manages solvent removal during each cycle, reducing the cumulative time required while maintaining film quality and material stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively fills trenches with high-quality films that have superior thermal stability and etch resistance, reducing manufacturing throughput issues and ensuring seamless filling of small dimensions without voids or seams.
Implementation Method 1
applying a first solution to a semiconductor structure of a semiconductor device to form a first coating over the semiconductor structure
Implementation Method 2
heating the first coating in a multi-step procedure to turn the first coating into a first film, the multi-step procedure including heating the first coating at a first temperature, followed by heating the first coating at a second temperature not lower than the first temperature
Implementation Method 3
UV light treatment to ensure complete solvent removal
Implementation Method 4
heating the first coating in a multi-step procedure to turn the first coating into a first film
Data Source
AI summary
A method includes: applying a first solution to a semiconductor structure of a semiconductor device to form a first coating, the semiconductor structure including a feature and the trench, the first coating being formed in the trench and over the feature, the first solution containing a metal-containing solute; heating the first coating in a multi-step procedure to turn the first coating into a first film, the multi-step procedure including heating at a first temperature, followed by heating at a second temperature not lower than the first temperature; applying a second solution onto the first film to form a second coating, the second solution containing the metal-containing solute; and heating the second coating in a multi-step procedure to turn the second coating into a second film, the multi-step procedure including heating at a third temperature, followed by heating at a fourth temperature not lower than the third temperature.