Semiconductor Trench Layout for Breakdown Resistance and Noise Isolation
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Solution Overview
Problem
Semiconductor devices face challenges in improving element breakdown resistance due to noise interference and current concentration, particularly in the interaction between transistor and diode sections.
Innovation Solution
The semiconductor device incorporates a dummy trench section electrically connected to the gate metal layer but not in contact with the emitter region, along with a boundary region to prevent interference between transistor and diode sections, and a higher concentration of trench sections in the diode section to enhance capacitance and reduce current concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the transistor section and diode section are placed adjacent to each other, then the device area is reduced, but noise interference and current concentration increase
Solution Approach 1:
A dummy trench section is introduced as an intermediary structure between the transistor section and diode section. This dummy trench, filled with insulating material, acts as a buffer that prevents direct electromagnetic coupling and current concentration between the adjacent transistor and diode sections, thereby reducing noise interference while maintaining compact device area.
Solution Approach 2:
The device structure is segmented into distinct regions: transistor section, boundary region with dummy trench, and diode section. The dummy trench divides the adjacent sections spatially, creating isolation zones that prevent harmful electromagnetic interactions while allowing the sections to remain physically close for area efficiency.
2Reliability
If the gate trench section is deep, then the breakdown resistance is improved, but the manufacturing complexity increases
Solution Approach 1:
The depth of the gate trench section is optimized as a critical parameter to achieve the required breakdown resistance. By controlling the trench depth within specific ranges and adjusting the gate insulating film thickness, the design achieves high breakdown resistance without requiring excessively deep trenches that would increase manufacturing complexity.
Solution Approach 2:
The gate trench structure uses composite materials including the gate insulating film (oxide or nitride layers) and conductive gate material. This composite structure enables the gate trench to achieve high breakdown resistance through material properties rather than solely relying on increased depth, thereby reducing manufacturing complexity.
3Power
If the emitter region concentration is high, then the current drive capability is improved, but the noise susceptibility increases
Solution Approach 1:
The emitter region is designed with non-uniform doping concentration, having higher concentration in specific areas to enhance current drive capability while maintaining lower concentration in other regions to reduce noise susceptibility. The boundary region with the dummy trench also creates local quality variations that isolate high-concentration emitter regions from noise sources.
Data Source
AI summary
Provided is a semiconductor device having transistor and diode sections. The semiconductor device comprises: a gate metal layer provided above the upper surface of a semiconductor substrate; an emitter electrode provided above the upper surface of the semiconductor substrate; a first conductivity-type emitter region provided on the semiconductor substrate upper surface side in the transistor section; a gate trench section, which is provided on the semiconductor substrate upper surface side in the transistor section, is electrically connected to the gate metal layer, and is in contact with the emitter region; an emitter trench section, which is provided on the semiconductor substrate upper surface side in the diode section, and is electrically connected to the emitter electrode; and a dummy trench section, which is provided on the semiconductor substrate upper surface side, is electrically connected to the gate metal layer, and is not in contact with the emitter region.