Semiconductor Trench Oxide Sealing via Merging and Universality
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Solution Overview
Problem
Conventional methods for producing controllable semiconductor components require additional process steps and increased production costs due to the need for sealing techniques like protective varnish or polycrystalline silicon in contact trenches, which restrict the reduction of structure size and cell pitch.
Innovation Solution
A method involving the formation of trenches with varying widths and depths in a semiconductor body, where an oxide layer is used to fill and insulate the trenches, allowing for subsequent process steps without affecting the sealed areas, and subsequently removing the oxide layer to expose the trench surfaces for electrode formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If protective varnish or polycrystalline silicon is used to seal contact trenches, then the source region and contact trench are protected during processing, but the number of process steps increases and production costs increase
Solution Approach 1:
The patent combines the sealing function with the oxide layer formation process that is already required for other purposes in the semiconductor device. The oxide layer simultaneously serves as both a sealing material for the contact trench and as part of the standard fabrication process, thereby eliminating the need for separate sealing steps while maintaining protection of the source region and contact trench during subsequent processing
Solution Approach 2:
The oxide layer is given multiple functions: it acts as a sealant for the contact trench, provides electrical insulation, and integrates with the existing fabrication process flow. This multi-functional approach allows the same material and process step to achieve both protection and standard fabrication requirements, reducing overall process complexity
2Reliability
If protective varnish or polycrystalline silicon is used to seal contact trenches, then the source region and contact trench are protected during processing, but production costs increase
Solution Approach 1:
The patent combines the sealing function with the oxide layer formation process that is already required for other purposes in the semiconductor device. The oxide layer simultaneously serves as both a sealing material for the contact trench and as part of the standard fabrication process, thereby eliminating the need for separate sealing steps while maintaining protection of the source region and contact trench during subsequent processing
Solution Approach 2:
The oxide layer used for sealing is a temporary structure that serves its protective function during critical processing steps and is subsequently removed. This disposable approach avoids the need for permanent, expensive sealing materials like polycrystalline silicon, reducing production costs while maintaining reliability during the manufacturing process
3Reliability
If conventional sealing techniques are used, then the source region is protected, but the structure size and cell pitch cannot be reduced
Solution Approach 1:
The patent combines the sealing function with the oxide layer formation process that is already required for other purposes in the semiconductor device. The oxide layer simultaneously serves as both a sealing material for the contact trench and as part of the standard fabrication process, thereby eliminating the need for separate sealing steps while maintaining protection of the source region and contact trench during subsequent processing
Solution Approach 2:
The patent changes the parameters of the oxide layer formation process to achieve sealing functionality. By adjusting the thickness, deposition conditions, and removal timing of the oxide layer, the method provides effective sealing without requiring additional process steps, enabling further reduction of structure size and cell pitch
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach eliminates the need for extra sealing steps, reduces production costs, and enables smaller structure sizes by utilizing the oxide layer formation process for sealing, thereby simplifying the production process and enhancing scalability.
Implementation Method 1
an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench
Data Source
AI summary
A method of producing a controllable semiconductor component includes providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. The first trench has a first width and a first depth, and the second trench has a second width greater than the first width and a second depth greater than the first depth. The method further includes forming, in a common process, an oxide layer in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench, and removing the oxide layer from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench.