Semiconductor Chip Trench Segmentation for Crack-Free Substrate Detachment
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Solution Overview
Problem
The challenge in producing optoelectronic semiconductor components is the risk of damage to the semiconductor layer sequence during substrate removal, leading to cracks and reduced integration density due to the necessary distance between chips for singulation.
Innovation Solution
A method involving a semiconductor chip with a sacrificial region and a trench that separates the active region from the sacrificial region, allowing for gentle and efficient substrate detachment, minimizing damage to the active region and enabling closer integration of semiconductor chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is removed from the semiconductor layer sequence during singulation, then the semiconductor chips can be separated and integrated, but cracks and damage occur in the semiconductor layer sequence
Solution Approach 1:
The semiconductor layer sequence is divided into active region and sacrificial region by a trench. The sacrificial region is specifically designed to remain connected to the substrate during detachment, serving as a buffer zone that prevents crack propagation into the active region. This segmentation allows the active region to be freed from the substrate while the sacrificial region absorbs the mechanical stress of detachment.
Solution Approach 2:
The sacrificial region acts as an intermediary between the active region and the substrate. During substrate removal, the sacrificial region maintains the mechanical connection temporarily, serving as a mediator that protects the active region from direct mechanical stress. The trench further defines this intermediary zone, ensuring that any cracks or damage occur only in the sacrificial region and not in the active region.
2Productivity
If a distance is maintained between chips for singulation, then substrate removal is possible, but integration density decreases
Solution Approach 1:
Different regions of the semiconductor layer sequence are assigned different functions: the active region is optimized for optoelectronic performance with intact semiconductor layers, while the sacrificial region is specifically designed to be damaged or removed. This local differentiation allows the active region to benefit from close chip spacing while the sacrificial region absorbs the necessary space for substrate detachment, enabling higher integration density without compromising manufacturability.
Data Source
AI summary
A method for fabricating an optoelectronic semiconductor component is disclosed. A semiconductor chip is produced by singularizing a wafer. The semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region. The sacrificial region in the finished semiconductor component is not intended to emit or absorb radiation. A trench, introduced into the semiconductor layer sequence, penetrates the active layer and separates the active region from the sacrificial region. The semiconductor chip with the semiconductor layer sequence is applied on a carrier. The substrate is detached from the active region of the semiconductor layer sequence. In the sacrificial region, the semiconductor layer sequence remains mechanically connected to the substrate.