Semiconductor Fabrication Integrating Transistor and Capacitor Trenches
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Solution Overview
Problem
The existing semiconductor device fabrication processes are complex and costly due to the separate processing of transistors and capacitors, which hinders integration and increases fabrication costs.
Innovation Solution
A method that involves forming trenches of varying widths and depths on a substrate using patterned mask layers, followed by the deposition of dielectric and conductor layers, allowing for simultaneous processing of transistor and capacitor devices, thereby integrating different device fabrications and simplifying the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If separate processing of transistors and capacitors is used, then device functionality is achieved, but fabrication process complexity increases and costs rise
Solution Approach 1:
The patent combines the fabrication processes for transistors and capacitors into a single integrated process. Multiple device types are fabricated simultaneously on the same substrate using shared process steps, including common trench formation, dielectric layer deposition, and conductor layer formation, thereby simplifying the overall fabrication process and reducing manufacturing complexity
Solution Approach 2:
The patent employs universal process steps that serve multiple device fabrication purposes. For example, a single etching process forms trenches for both transistor gates and capacitor structures, and dielectric layers are deposited conformally to serve as gate insulators for transistors and as insulating layers for capacitors, making the fabrication process multi-functional and applicable to diverse device structures
2Ease of manufacture
If separate processing of transistors and capacitors is used, then device functionality is achieved, but fabrication costs increase
Solution Approach 1:
The patent merges the fabrication sequences for transistors and capacitors into a unified process flow. By performing trench formation, dielectric deposition, and conductor patterning simultaneously for both device types, the patent reduces the total number of fabrication steps required, thereby lowering fabrication costs while managing integration complexity through systematic process design
3Manufacturing precision
If uniform trench dimensions are used, then fabrication process is simplified, but device performance optimization is limited
Solution Approach 1:
The patent applies local quality by forming trenches with different dimensions in different regions of the substrate. First trenches for transistor gates have specific width and depth dimensions optimized for transistor performance, while second trenches for capacitor structures have different dimensions optimized for capacitor performance. This allows each device type to have locally optimized geometry while using a unified fabrication approach
4Productivity
If integrated fabrication is implemented, then fabrication process is simplified, but precise control of varying trench dimensions becomes challenging
Solution Approach 1:
The patent segments the substrate into different device regions (first area for transistors, second area for capacitors) and forms trenches in each region with dimensions optimized for that specific device type. The segmentation is achieved through region-specific masking and etching processes that allow precise control of trench dimensions in each area while maintaining an integrated fabrication workflow
Solution Approach 2:
The patent employs parameter changes by varying trench width, depth, and other geometric parameters according to the specific device requirements in different substrate regions. By adjusting etching parameters, masking layer thicknesses, and deposition conditions, the patent achieves precise control over trench dimensions while maintaining an integrated fabrication process that improves overall productivity
Data Source
AI summary
A method of fabricating a semiconductor device is described. A substrate having first and second areas is provided. A first patterned mask layer having at least one first opening in the first area and at least one second opening in the second area is formed over the substrate, wherein the first opening is smaller than the second opening. A portion of the substrate is removed with the first patterned mask layer as a mask to form first and second trenches respectively in the substrate in the first and second areas, wherein the width and the depth of the first trench are less than those of the second trench. A first dielectric layer is formed at least in the first and second trenches. A conductive structure is formed on the first dielectric layer on at least a portion of the sidewall of each of the first and second trenches.