Semiconductor Package Trench Segmentation for Warpage Reduction

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Solution Overview

Problem

Conventional semiconductor packages face reliability issues due to thermal expansion mismatch between semiconductor elements and substrates, leading to solder ball damage and open circuits, which worsen with larger element sizes.

Innovation Solution

Incorporating a filler with a different coefficient of thermal expansion (CTE) into the semiconductor element, which divides the main body into individual blocks, reducing overall warpage and enhancing reliability by allowing independent block warpage rather than cumulative warpage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the size of the semiconductor element becomes larger, then the stacking capacity increases, but the warpage damage to solder balls becomes more severe

Engineering Contradiction:
Improvesize of semiconductor elementVSAvoidsolder ball integrity
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The semiconductor element is divided into multiple blocks separated by trenches. Each block can warp independently without affecting other blocks, preventing cumulative warpage across the entire element. This segmentation allows larger element sizes while maintaining solder ball integrity by isolating warpage effects to individual blocks.

Inventive Principle:
Principle #1Segmentation

2Reliability

If the semiconductor element is bonded to the substrate, then electrical connection is established, but CTE mismatch causes warpage and solder ball damage

Engineering Contradiction:
Improveelectrical connectionVSAvoidwarpage degree
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The element is segmented into blocks by trenches, allowing each block to accommodate thermal expansion independently. This reduces the overall warpage degree while maintaining electrical connections through conductive vias that pass through the blocks.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The coefficient of thermal expansion (CTE) of the semiconductor element is adjusted by selecting materials with appropriate CTE values for the blocks and filler. This parameter modification reduces CTE mismatch with the substrate, thereby reducing warpage while maintaining reliable electrical connections.

Inventive Principle:
Principle #35Parameter changes

3Shape

If filler is added to adjust CTE, then warpage is reduced, but device structure becomes more complex

Engineering Contradiction:
Improvewarpage degreeVSAvoidelement structure
Core Design Contradiction:
ShapeVSDevice complexity

Solution Approach 1:

The structure is segmented into blocks with trenches, where filler material is placed in the trenches. This segmentation approach reduces warpage through independent block deformation while the filler provides CTE adjustment. The modular nature of this segmentation actually simplifies the overall design compared to uniformly complex structures.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces warpage and increases the reliability of semiconductor packages, especially for larger elements, by adjusting the CTE of the semiconductor element and allowing for more efficient heat management, thus extending the service life and enabling more chips to be stacked.

Implementation Method 1

a CTE of the filler is different from that of the main body and the conductive vias

Methodology Applied
Scientific EffectCoefficient of Thermal Expansion (CTE): Thermal Expansion

Implementation Method 2

As the material of the semiconductor element is different from that of the substrate, their coefficients of thermal expansion (CTEs) are also typically different. When the conventional stacked package is heated, as the CTE of the material of the semiconductor element is different from that of the substrate, their degrees of warpage are different

Methodology Applied
Scientific EffectThermal Expansion Mismatch: Thermal Expansion

Data Source

PatentUS10056325B2Semiconductor package having a trench penetrating a main body
Publication Date: 2018.08.21 ADVANCED SEMICON ENG INC
  • US10056325B2 patent drawing
  • US10056325B2 patent drawing
  • US10056325B2 patent drawing

AI summary

The present disclosure relates to a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor element including a main body, a plurality of conductive vias, and at least one filler. The conductive vias penetrate through the main body. The filler is located in the main body, and a coefficient of thermal expansion (CTE) of the filler is different from that of the main body and the conductive vias. Thus, the CTE of the overall semiconductor element can be adjusted, so as to reduce warpage.