Semiconductor TSP Detection Using Transient Joule Heating
Solution Overview
Problem
The existing methods for measuring chip temperature or thermal resistance of semiconductor devices are time-consuming, making it impractical for manufacturers to conduct full or batch inspections, leading to low yield and reliability issues in semiconductor devices like light-emitting diodes.
Innovation Solution
A method and apparatus that apply a detecting current to a semiconductor device, measuring temperatures and voltages to establish a relationship between them, using a platen, electrical measurement unit, temperature measurement unit, and control unit to quickly obtain a temperature-sensitive parameter (TSP), which includes a current source to heat the device and probes to measure voltages and temperatures during a transient temperature rise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the known method for measuring chip temperature or thermal resistance is used, then measurement accuracy is improved, but measurement time is excessively long
Solution Approach 1:
The patent pre-calculates and stores the relationship between voltage and temperature (TSP characteristics) during device manufacturing. This preliminary action eliminates the need for time-consuming real-time temperature measurements during inspection, as the pre-established voltage-temperature relationship can be directly used to determine chip temperature from voltage measurements alone.
Solution Approach 2:
The patent creates a simplified model by copying the essential voltage-temperature relationship characteristics from actual temperature measurements. Instead of measuring temperature directly, the system uses voltage measurements that replicate the temperature information through the pre-established TSP model, significantly reducing measurement time while maintaining accuracy.
2Reliability
If TSP measurement is conducted for all devices, then yield and reliability improvement is achieved, but resource and time consumption becomes unacceptably high
Solution Approach 1:
The patent replaces complex temperature measurement procedures with simplified voltage measurements that copy the essential temperature information through the pre-established TSP relationship. This allows rapid inspection of all devices without the time and resource constraints of traditional methods.
Solution Approach 2:
The patent substitutes complex thermal measurement systems with simple electrical voltage measurement systems. By replacing the mechanical/thermal measurement approach with an electrical measurement approach based on pre-characterized voltage-temperature relationships, the system achieves rapid inspection capability for batch processing.
3Measurement precision
If traditional TSP measurement method is used, then accurate temperature-sensitive parameter is obtained, but manufacturing complexity and resource requirements increase
Solution Approach 1:
The patent replaces complex thermal measurement systems with simple electrical voltage measurement systems. The pre-characterized TSP relationship allows accurate temperature determination through simple voltage measurements, eliminating the need for complex temperature sensing equipment and procedures.
Solution Approach 2:
The patent performs the complex TSP characterization work in advance during manufacturing, storing the voltage-temperature relationship for later use. This preliminary action simplifies the actual inspection process, as only simple voltage measurements are needed during production, reducing both system complexity and resource requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the rapid determination of TSP, reducing time and resource costs, enabling more efficient production and improving the yield and reliability of semiconductor devices by facilitating quicker batch inspections.
Implementation Method 1
applying a detecting current and heating the semiconductor device
Data Source
AI summary
A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.