Semiconductor Heat-Spreading Structure With Directional TSV Cooling
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Solution Overview
Problem
Semiconductor devices often face challenges with heat distribution, as heat sources within the devices exceed the thermal dissipation capabilities of the semiconductor platform, leading to performance issues and increased power consumption due to external active cooling methods.
Innovation Solution
The implementation of a thermally conductive, heat spreading structure with repeating conductive patterns that are thermally coupled to each other, allowing for the transfer of heat away from thermal sources with desired directionality, thereby reducing localized heat concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If heat sources are increased to improve device functionality, then device performance is enhanced, but thermal dissipation capability is exceeded leading to performance degradation
Solution Approach 1:
The patent divides the heat dissipation function into multiple segments by creating an array of through-silicon vias (TSVs) distributed across the substrate. Each TSV acts as an independent heat conduction channel, collectively providing enhanced thermal dissipation capacity without requiring a single high-power heat sink, thus resolving the contradiction between device power functionality and thermal management.
Solution Approach 2:
The patent transitions from two-dimensional surface cooling to three-dimensional heat dissipation by creating vertical heat conduction paths through the substrate using TSVs. This dimensional change allows heat to be dissipated through the thickness of the substrate, significantly increasing the effective heat dissipation area and capability while maintaining device functionality.
2Temperature
If external active cooling methods are used to manage heat, then temperature control is improved, but power consumption increases
Solution Approach 1:
The patent implements passive thermal management where the substrate itself, through its inherent thermal conductivity and the TSV structure, automatically dissipates heat without requiring external active cooling systems. The heat conduction occurs naturally from high-temperature regions to low-temperature regions through the thermally conductive substrate and TSVs, eliminating the need for additional power-consuming cooling mechanisms.
3Reliability
If heat concentration is reduced to improve thermal management, then device reliability is enhanced, but device complexity increases
Solution Approach 1:
The TSV structure serves multiple functions simultaneously: it provides electrical interconnections between different device layers and acts as a thermal conduction pathway for heat dissipation. This multi-functionality allows the same structural element to address both electrical connectivity and thermal management needs, enhancing device reliability without proportionally increasing structural complexity.
Solution Approach 2:
The patent uses a uniform array of TSVs distributed across the substrate, creating a homogeneous thermal management structure. This regular, repeating pattern simplifies the design and fabrication process compared to complex, non-uniform cooling solutions, while still achieving effective heat distribution and dissipation across the entire device area, thus improving reliability without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively manages heat distribution within semiconductor devices, enhancing performance by reducing thermal resistance and minimizing the need for external cooling methods, thus improving overall device efficiency.
Implementation Method 1
A combination of the thermally conductive vias and the group of thermally conductive layers is configured to transfer heat away from the thermal source with a desired directionality
Data Source
AI summary
Aspects of the subject disclosure may include, for example, a process that provides a semiconductor substrate and forms repeating, conductive patterns configured for coupling to active circuitry. Each pattern comprises a group of thermally conductive layers, wherein the group of thermally layers is thermally coupled to a thermal source generated by the active circuitry. Thermally conductive vias interconnect the group of thermally conductive layers, wherein a combination of the vias and the group of thermally conductive layers is configured to transfer heat from the thermal source with a desired directionality. The first repeating patterns are thermally coupled to each other to combine the desired directionality of each of the patterns, wherein the combination results in a distributed directionality of the heat from the thermal source thereby reducing a localized concentration of the heat. Other embodiments are disclosed.