3D Stacked Semiconductor Package with TSV Interconnects

The patent transitions from traditional two-dimensional planar packaging to three-dimensional vertical stacking architecture. Multiple semiconductor devices are stacked vertically on a substrate with through-silicon vias (TSVs) enabling inter-layer electrical connections. This dimensional change allows compact integration while maintaining manufacturing feasibility through established semiconductor fabrication processes.

The patent implements nested packaging where semiconductor devices are stacked within a compact package structure. The first and second semiconductor devices are positioned at different vertical levels, with interconnect structures nesting through the substrate. This nested arrangement minimizes package footprint while maintaining electrical connectivity between devices.

The patent divides the semiconductor package into distinct functional segments: first semiconductor device, second semiconductor device, substrate, interconnect structures, and encapsulant. Each segment performs specific functions and can be independently optimized. The segmentation allows for modular assembly and testing, improving overall reliability while managing complexity through structured organization.

The patent applies different material properties and structural characteristics to different regions of the package. The encapsulant provides environmental protection specifically where needed, TSVs provide electrical connectivity in specific locations, and the substrate provides mechanical support. This localized optimization of properties enhances reliability without requiring complex modifications throughout the entire structure.

The patent achieves high performance in a compact volume by utilizing the vertical dimension for device stacking. The three-dimensional architecture reduces the horizontal footprint while maintaining or enhancing performance through shorter interconnect paths and reduced parasitic effects compared to traditional planar layouts.

The patent incorporates through-silicon vias (TSVs) and interconnect structures during the substrate fabrication process before device assembly. This preliminary formation of electrical pathways enables subsequent device stacking without requiring complex post-assembly routing, thereby maintaining high performance while minimizing package size.