Semiconductor Package UBM Sealing Ring for Delamination Control
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and mechanical reliability in semiconductor packaging, particularly in Package-on-Package (PoP) technology, where delamination at the interface of under bump metallurgy (UBM) and dielectric layers can occur, leading to reduced reliability.
Innovation Solution
A process is developed where a conductive paste is applied between the dielectric layer and the UBM, and then cured to form a conductive ring that seals the interface, preventing flux from entering and improving adhesion between the dielectric layer and the UBM.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If Package-on-Package (PoP) technology is used to achieve high integration density, then component density and functionality are enhanced, but delamination at the interface of under bump metallurgy and dielectric layers occurs, reducing mechanical reliability
Solution Approach 1:
A conductive paste is applied between the dielectric layer and the UBM before final assembly, and then cured to form a conductive ring that seals the interface. This preliminary sealing action prevents delamination from occurring in the first place, addressing the reliability issue while maintaining high integration density through PoP technology
Solution Approach 2:
The conductive paste acts as an intermediary substance between the dielectric layer and the UBM. When cured, it forms a conductive ring that serves as a sealing mediator, preventing flux from entering the interface and preventing delamination, thus resolving the contradiction between high integration density and mechanical reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive ring enhances the mechanical reliability of the redistribution structure by preventing delamination at the UBM and dielectric layer interface, thereby improving the overall performance and durability of semiconductor packages.
Implementation Method 1
a conductive paste is applied between the dielectric layer and the UBM, and then cured to form a conductive ring that seals the interface
Implementation Method 2
the conductive paste is applied between the dielectric layer and the UBM, and then cured to form a conductive ring that seals the interface, preventing flux from entering
Implementation Method 3
improving adhesion between the dielectric layer and the UBM
Data Source
AI summary
In an embodiment, a device includes: an integrated circuit die; a first dielectric layer over the integrated circuit die; a first metallization pattern extending through the first dielectric layer to electrically connect to the integrated circuit die; a second dielectric layer over the first metallization pattern; an under bump metallurgy extending through the second dielectric layer; a third dielectric layer over the second dielectric layer and portions of the under bump metallurgy; a conductive ring sealing an interface of the third dielectric layer and the under bump metallurgy; and a conductive connector extending through the center of the conductive ring, the conductive connector electrically connected to the under bump metallurgy.