Semiconductor Device Inorganic Organic Protective Layer Undercut
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Solution Overview
Problem
Conventional semiconductor devices face reliability issues due to peeling and loosening of organic protective layers under temperature changes, which compromises their durability in high-temperature and high-humidity environments.
Innovation Solution
A semiconductor device structure comprising a semiconductor substrate, interlayer insulating layer, electrodes, an inorganic protective layer with undercuts, and an organic protective layer, where the inorganic protective layer is made of silicon nitride or silicon oxide and the organic layer is polyimide or polybenzoxazole, with the undercuts in the inorganic layer contacting the organic layer to prevent peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an organic protective layer is formed on the semiconductor device, then protection against environmental factors is improved, but peeling and loosening occur under temperature changes reducing reliability
Solution Approach 1:
The protective structure is segmented into multiple layers: an inorganic protective layer (first protective layer) and an organic protective layer (second protective layer). The inorganic layer provides a stable base that prevents peeling, while the organic layer provides environmental protection. This segmentation allows each layer to perform its specific function without compromising the other.
Solution Approach 2:
The patent uses a composite protective structure combining inorganic material (such as silicon oxide or silicon nitride) and organic material (such as polyimide or acrylic resin). This composite approach leverages the advantages of both materials: the inorganic layer provides thermal stability and adhesion prevention, while the organic layer provides flexibility and environmental resistance.
2Device complexity
If the protective layer structure is simplified, then manufacturing complexity is reduced, but moisture ingress occurs in high-humidity conditions
Solution Approach 1:
The inorganic protective layer acts as an intermediary between the semiconductor substrate and the organic protective layer. It provides a stable interface that prevents direct contact between the organic layer and the substrate, thereby preventing peeling and creating a reliable barrier against moisture ingress while maintaining a relatively simple overall structure.
3Device complexity
If a single protective layer is used, then device complexity is reduced, but peeling occurs under thermal stress
Solution Approach 1:
The protective function is segmented into two distinct layers with different material properties. The inorganic layer (first protective layer) is specifically designed to prevent peeling by providing a stable, non-organic interface, while the organic layer (second protective layer) provides additional environmental protection. This segmentation resolves the contradiction by distributing functions across layers.
Solution Approach 2:
The patent changes the material parameter of the protective layers by using an inorganic material for the first layer instead of using a single organic material throughout. This parameter change (from purely organic to inorganic-organic composite) fundamentally alters the thermal and adhesive properties, preventing peeling under thermal stress while maintaining structural simplicity.
Data Source
AI summary
A semiconductor device according to an exemplary embodiment includes a semiconductor substrate, an interlayer insulating layer, at least one electrode, an inorganic protective layer, and an organic protective layer. The interlayer insulating layer is formed on the semiconductor substrate and has at least one opening. The at least one electrode has part formed on an edge of the at least one opening, and has other part electrically connected, in the at least one opening, to the semiconductor substrate. The inorganic protective layer includes an inner edge portion and an outer edge portion. The inner edge portion covers an edge of the at least one electrode. The inorganic protective layer, except for the inner edge portion, is formed on the interlayer insulating layer. The organic protective layer covers the inorganic protective layer. One of the inner edge portion and the outer edge portion of the inorganic protective layer has an undercut.