Semiconductor Undercut Thermal Conduction for Fast Sensor Response
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Solution Overview
Problem
Semiconductor devices face challenges in accurately monitoring temperature due to destructive junction temperatures during high SOA switching or short-circuit events, requiring a temperature sensor with fast reaction time and reliable measurement results, especially in automotive applications where ASIL classifications are stringent.
Innovation Solution
A method involving the partial removal of a supporting layer between semiconductor layers using an etching process to form an undercut, which is then filled with a material of higher thermal conductivity, allowing for the formation of a sensor device on the second semiconductor layer to effectively monitor temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a supporting layer is used to separate semiconductor layers, then mechanical stability and electrical isolation are improved, but thermal conductivity deteriorates, slowing temperature sensor response time
Solution Approach 1:
The supporting layer is selectively removed in specific regions to create undercuts, segmenting the thermal conduction path. This allows different regions to have different thermal conductivities - the supporting layer provides isolation where needed, while the high thermal conductivity material fills the undercut to enable fast heat transfer to the sensor device, resolving the contradiction between mechanical stability and thermal response speed
Solution Approach 2:
The patent applies different thermal conductivity properties to different spatial locations. The undercut region is filled with high thermal conductivity material (first material) to enable fast heat transfer, while the supporting layer remains in other regions to provide mechanical support and electrical isolation. This local differentiation resolves the contradiction by optimizing each region for its specific function
2Speed
If the supporting layer is completely removed to improve heat transfer, then thermal conductivity is improved, but mechanical stability and electrical isolation deteriorate
Solution Approach 1:
Instead of completely removing the supporting layer, the patent applies partial removal to create undercuts only in specific regions. This partial action is sufficient to establish thermal conduction paths to the sensor device while leaving the supporting layer intact in other regions to maintain mechanical stability and electrical isolation, thus resolving the contradiction
3Speed
If a temperature sensor is placed close to the semiconductor junction for fast response, then response time is improved, but measurement accuracy deteriorates due to exposure to destructive temperatures
Solution Approach 1:
The high thermal conductivity material in the undercut region acts as a thermal intermediary, conducting heat rapidly from the semiconductor junction to the sensor device. This mediator enables the sensor to be positioned close to the junction for fast response while the sensor itself remains in a location where it can accurately measure temperature without being directly exposed to destructive thermal conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables accurate and rapid temperature monitoring, protecting semiconductor devices from overheating by efficiently transferring heat and providing reliable temperature measurements, thus enhancing their reliability and safety in critical applications.
Implementation Method 1
partly removing a supporting layer arranged between a first semiconductor layer and a second semiconductor layer using an etching process
Implementation Method 2
at least partly filling the at least one undercut with a first material having a higher thermal conductivity than the supporting layer
Data Source
AI summary
A method includes partly removing a supporting layer arranged between a first semiconductor layer and a second semiconductor layer using an etching process to form at least one undercut between the first semiconductor layer and the second semiconductor layer, at least partly filling the at least one undercut with a first material having a higher thermal conductivity than the supporting layer, and forming a sensor device in or on the second semiconductor layer. Semiconductor arrangements and devices produced by the method are also described.