Semiconductor Unique Information Generation via Circuit Segmentation

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Solution Overview

Problem

Existing methods for generating unique information in semiconductor devices using process variation suffer from reduced randomness and permanence due to minimized circuit component variation, which can be affected by temperature changes.

Innovation Solution

The method involves designing and manufacturing two circuits with different design and manufacturing conditions, where the second circuit has increased variation, utilizing transistors with varying channel widths, dopant concentrations, and LDD structures to enhance the randomness and permanence of unique information generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If circuit component variation is minimized to improve reproducibility and reliability, then manufacturing precision is improved, but the randomness of unique information generation deteriorates

Engineering Contradiction:
Improvecircuit component variationVSAvoidrandomness of unique information
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The invention divides the semiconductor device into two distinct circuits: a first circuit with minimized variation for high reproducibility, and a second circuit with increased variation for unique information generation. This segmentation allows each circuit to be optimized for its specific function without compromise.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor device are given different qualities: the first circuit uses transistors with standardized parameters for precision, while the second circuit uses transistors with intentionally increased variation in channel width, LDD structure, and dopant concentration to enhance randomness.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If transistor variation is minimized to improve circuit uniformity, then manufacturing precision is improved, but the permanence of unique information deteriorates due to temperature sensitivity

Engineering Contradiction:
Improvetransistor uniformityVSAvoidpermanence of unique information
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The invention separates the functions of precision operation and unique information generation into different circuits, allowing the second circuit to use high-variation transistors that provide temperature-insensitive unique information while the first circuit maintains standardized performance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes the parameters of transistors in the second circuit by increasing variation in channel width, introducing or modifying LDD structures, and adjusting dopant concentration profiles. These parameter changes create unique information that is less sensitive to temperature variations.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If standardized transistor design is used to improve reproducibility, then manufacturing precision is improved, but the adaptability for unique information generation deteriorates

Engineering Contradiction:
Improvecircuit reproducibilityVSAvoidunique information generation capability
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The invention creates two specialized circuits: one optimized for standardized operation and another optimized for unique information generation. This segmentation enables the semiconductor device to simultaneously achieve high reproducibility and strong adaptability for security applications.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The semiconductor device achieves multi-functionality by integrating both a precision-oriented first circuit and a randomness-oriented second circuit, allowing the device to serve both standard operational requirements and unique information generation requirements within a single chip.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10242950B2Semiconductor device, method of manufacturing the same and generation method of unique information
Publication Date: 2019.03.26 WINBOND ELECTRONICS CORP
  • US10242950B2 patent drawing
  • US10242950B2 patent drawing
  • US10242950B2 patent drawing

AI summary

A semiconductor device with improved generation function of unique information is provided. The semiconductor device includes an integrated circuit designed or fabricated based on a general design condition or manufacturing condition, an input/output circuit, and a unique-information generation circuit to generate unique information of the semiconductor device. The unique-information generation circuit includes a circuit for PUF and a code-generation unit. The circuit for PUF is fabricated based on the design condition or manufacturing condition which is different from the general design condition or manufacturing condition and has a factor which makes variations of circuit components become large. The code-generation unit generates codes based on the output of the circuit for PUF.