Semiconductor Use Time Management Circuit for DRAM Reliability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices, such as DRAMs, face issues with data retention over time, leading to soft-failed memory cells and operational degradation, which can cause read errors and affect overall performance.

Innovation Solution

A method for use time management in semiconductor devices, involving the measurement and tracking of accumulated operation time, generation of unit storage activation signals, and adjustment of internal circuit operations based on detected use time, using mechanisms like antifuses or e-fuses for data storage and a control circuit for generating adjusting information.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If semiconductor devices operate continuously over time, then productivity and usage duration increase, but reliability deteriorates due to soft-failed memory cells and operational degradation

Engineering Contradiction:
Improvecontinuous operation capabilityVSAvoiddata retention and operational reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements preliminary action by measuring accumulated operation time and proactively adjusting internal circuit operations before soft-failed cells cause read errors. The use time managing circuit continuously monitors operation duration and preemptively modifies refresh operations, voltage levels, or current characteristics to counteract degradation effects before they manifest as failures, thereby maintaining reliability during continuous productivity-oriented operation

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent employs feedback mechanisms where the use time managing circuit continuously monitors accumulated operation time and uses this information to dynamically adjust internal circuit parameters. The system measures operation duration, compares it against reference values, and automatically modifies refresh frequencies, voltage levels, or current characteristics based on the measured use time, creating a closed-loop control system that adapts to aging effects in real-time

Inventive Principle:
Principle #23Feedback

2Reliability

If use time management circuits are added to monitor and adjust operations, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improveoperational reliability through use time managementVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies merging by integrating the use time managing circuit functionality into the existing memory controller or device logic. The operation time measurement, storage activation signal generation, and internal circuit adjustment functions are combined within a single integrated circuit block that leverages existing device resources, avoiding the need for separate independent monitoring and control systems

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The use time managing circuit is designed with multi-functionality, serving multiple purposes: measuring accumulated operation time, generating storage activation signals, storing use time data in nonvolatile memory, reading cumulative use time, and adjusting various internal circuit parameters. This single circuit performs what would otherwise require multiple separate functions, reducing overall device complexity while maintaining comprehensive reliability management

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9711205B2Method of use time management for semiconductor device and semiconductor device including use time managing circuit
Publication Date: 2017.07.18 SAMSUNG ELECTRONICS CO LTD
  • US9711205B2 patent drawing
  • US9711205B2 patent drawing
  • US9711205B2 patent drawing

AI summary

A use time managing method of a semiconductor device may include (1) measuring an amount of accumulated operation time of the semiconductor device and when the amount is reached to a predetermined value, generating a unit storage activation signal; (2) repeating step (1) to generate one or more additional unit storage activation signals, thereby generating a plurality of unit storage activation signals, wherein the predetermined values are different for each repeating step; (3) storing data indicating each occurrence of generating the unit storage activation signals; and (4) detecting use time of the semiconductor device based on the cumulatively stored data.