Semiconductor Valve Monitoring with Bridged Circuits

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Solution Overview

Problem

Conventional strain measurement devices for valve devices face challenges such as inadequate temperature compensation, noise interference, difficulty in attaching to small devices, installation angle errors, and limited reliability and power efficiency, which hinder accurate and long-term monitoring of valve health.

Innovation Solution

A semiconductor substrate with bridged circuits comprising impurity-diffused resistors is mounted on the valve device, allowing for precise measurement of thrust and torque by configuring the resistors to be sensitive to specific strain directions and angles, reducing noise interference, and optimizing power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a strain gauge is used for measurement, then thrust and torque can be measured, but temperature changes cause insufficient sensitivity compensation and reduce measurement accuracy

Engineering Contradiction:
Improvemeasurement accuracyVSAvoidtemperature compensation
Core Design Contradiction:
Measurement precisionVSTemperature

Solution Approach 1:

The patent uses a semiconductor substrate where the resistance value changes in response to strain, and the piezoresistive coefficient changes with temperature. By utilizing this temperature-dependent coefficient change, the invention achieves automatic temperature compensation without requiring additional compensation mechanisms, thereby maintaining measurement accuracy across varying temperatures.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If the resistance value of the strain gauge is increased to reduce current consumption, then power efficiency improves, but noise interference increases and measurement accuracy decreases

Engineering Contradiction:
Improvecurrent consumptionVSAvoidnoise interference
Core Design Contradiction:
Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent employs a semiconductor substrate that integrates multiple functional properties: high piezoresistive coefficient for sensitivity, temperature-dependent coefficient for automatic compensation, and low intrinsic noise. This composite material approach allows the device to maintain low current consumption while resisting noise interference, as the semiconductor's inherent properties provide both low power operation and noise immunity simultaneously.

Inventive Principle:
Principle #40Composite materials

3Measurement precision

If multiple strain gauges are attached to measure thrust and torque, then measurement capability improves, but the device size increases and attachment to small valve devices becomes difficult

Engineering Contradiction:
Improvemeasurement capabilityVSAvoidattachment area
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent integrates both thrust measurement and torque measurement capabilities into a single semiconductor substrate. By configuring multiple impurity-diffused resistors on the same substrate in specific patterns, the invention simultaneously measures both parameters without requiring separate gauge attachments, thereby reducing the overall device footprint and enabling installation on small valve devices.

Inventive Principle:
Principle #5Merging (Combining)

4Measurement precision

If strain gauges are attached at specific angles to measure torque and thrust accurately, then measurement accuracy improves, but installation complexity increases and angle errors occur

Engineering Contradiction:
Improvemeasurement accuracyVSAvoidinstallation complexity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The patent utilizes the temperature-dependent changes in the piezoresistive coefficient of the semiconductor substrate to automatically compensate for installation angle deviations. When gauges are installed at slightly incorrect angles, the temperature-induced coefficient changes produce compensation effects that correct the measurement errors, thereby maintaining accuracy without requiring precise installation angles.

Inventive Principle:
Principle #35Parameter changes

5Volume of moving object

If a thin film strain detection portion is used, then the device can be made compact, but the fatigue life is limited and reliability decreases for long-term use

Engineering Contradiction:
Improvedevice sizeVSAvoidfatigue life
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent employs a semiconductor substrate with a bulk structure rather than a thin film configuration. The bulk semiconductor material provides superior mechanical strength and fatigue resistance while maintaining compact dimensions. This material choice ensures long-term reliability for valve device monitoring applications without sacrificing the compact form factor.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables accurate, reliable, and long-term monitoring of valve devices with improved power efficiency, reducing noise interference and installation errors, and allowing for compact integration on small devices.

Implementation Method 1

a semiconductor substrate 2 with a bridged circuit 4, 5 comprising a plurality of impurity-diffused resistors 4a to 4d, 5a to 5d

Methodology Applied
Scientific EffectPiezoresistive effect: Piezoresistive Effect

Data Source

PatentUS7584668B2Monitoring system for valve device
Publication Date: 2009.09.08 HITACHI LTD
  • US7584668B2 patent drawing
  • US7584668B2 patent drawing
  • US7584668B2 patent drawing

AI summary

A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.