Semiconductor Structure With Variable Pitch Mask Sidewalls
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Solution Overview
Problem
Current semiconductor manufacturing techniques, such as self-aligned quadruple patterning (SAQP), cannot meet the requirement of different pitches for target patterns in various regions of a semiconductor structure, limiting the density and performance of integrated circuits.
Innovation Solution
A method involving the formation of discrete core layers and mask sidewalls with varying thicknesses is used to create target patterns with different pitches by patterning a bottom core material layer with first and second mask sidewalls, and subsequently forming a third mask sidewall to transfer patterns to the base, allowing for distinct spacer thicknesses and pitches between patterns in different regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If self-aligned quadruple patterning (SAQP) method is used to increase pattern density, then the density of patterns formed on the substrate is quadruple that of photolithography process, but the pitch between target patterns is uniform across all regions, unable to meet different pitch requirements in different regions
Solution Approach 1:
The patent applies local quality by forming different thicknesses of mask sidewalls in different regions. Specifically, a first mask sidewall with first thickness is formed in a first region, and a second mask sidewall with second thickness (greater than first thickness) is formed in a second region. This allows each region to have locally optimized properties - the first region achieves higher pattern density while the second region achieves larger pitch, thereby resolving the contradiction between density and adaptability.
2Ease of manufacture
If uniform thickness mask sidewalls are used, then the manufacturing process is simpler, but the pitch between target patterns cannot be varied in different regions
Solution Approach 1:
The patent segments the mask sidewall formation process into region-specific steps. Different mask sidewalls are formed in different regions with different thicknesses - the first mask sidewall in the first region and the second mask sidewall in the second region. This segmentation allows the manufacturing process to accommodate varying pitch requirements while maintaining relative simplicity through standardized formation techniques applied differently across regions.
Data Source
AI summary
Disclosed are a semiconductor structure and a method for forming the same. The method includes: providing a base, including a first region and a second region, where a pitch between target patterns formed on the first region is greater than a pitch between target patterns formed on the second region; forming a bottom core material layer on the base; forming first core layers on the bottom core material layer; forming a first mask sidewall on a sidewall of the first core layer of the first region, and forming a second mask sidewall on a sidewall of the first core layer of the second region, where the thickness of the second mask sidewall is greater than the thickness of the first mask sidewall; removing the first core layers; patterning the bottom core material layer by using the first mask sidewall and the second mask sidewall as masks, to form a second core layer; removing the first mask sidewall and the second mask sidewall; forming a third mask sidewall on a sidewall of the second core layer; removing the second core layer; and patterning the base by using the third mask sidewall as a mask, to form target patterns protruding out of a residual base. The present disclosure meets the requirement of different pitches of the target patterns.