Semiconductor Device with Varying Dielectric Height
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Solution Overview
Problem
Miniaturization of semiconductor devices leads to issues such as gate current leakage, boron penetration, and edge depressions in shallow trench isolation structures, resulting in electrical attenuation and reduced performance.
Innovation Solution
A semiconductor device design featuring a substrate with shallow trench isolation structures, a dielectric layer of varying heights, and metal gates, along with sidewall structures and passivation layers, which reduces edge depression and enhances electrical performance without increasing the number of photomasks or production steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the size of the transistor is reduced for miniaturization, then the integration level and density of the semiconductor device are improved, but the transistor becomes prone to gate current leakage, boron penetration effect, and edge depressions in the shallow trench isolation structure, causing electrical attenuation and reduced performance
Solution Approach 1:
The patent applies local quality by creating a dielectric layer with different heights in different regions: a first height in the first region and a second height (greater than the first) in the second region. This non-uniform dielectric layer structure locally compensates for edge depressions at the shallow trench isolation structure, providing enhanced support where needed while maintaining overall device miniaturization and integration density.
2Productivity
If the transistor size is reduced, then the integration level is improved, but edge depression in the shallow trench isolation structure occurs, leading to electrical attenuation
Solution Approach 1:
The patent applies preliminary action by forming the dielectric layer with varying heights before subsequent processing steps. The dielectric layer is deposited to different heights in different regions to pre-compensate for potential edge depression issues, ensuring that the shallow trench isolation structure maintains its integrity during subsequent manufacturing processes and device operation.
3Ease of manufacture
If uniform dielectric layer height is used, then the manufacturing process is simple, but it cannot effectively reduce edge depression in different regions of the substrate
Solution Approach 1:
The patent implements local quality by specifying that the dielectric layer has a first height in the first region and a second height in the second region, where the second height is greater than the first height. This localized variation in dielectric layer thickness provides targeted support to different regions of the substrate, effectively addressing edge depression issues in specific areas while maintaining overall manufacturing feasibility.
Data Source
AI summary
A semiconductor device and a manufacturing method is provided. The semiconductor device includes a substrate, a shallow trench isolation structure, a dielectric layer, a gate, a source and a drain. The substrate includes a first region and a second region. The shallow trench isolation structure is arranged on the first region and the second region, and the shallow trench isolation structure is lower than a surface of the substrate and forms an opening. The dielectric layer is arranged in the opening and on the substrate, and a height of the dielectric layer in the second region is greater than that in the first region. The gate is arranged on the dielectric layer. The source is arranged on the substrate and located on a side of the gate. The drain is arranged on the substrate and located on the other side of the gate.