Semiconductor Wiring Layout With Vertical Pad Connections
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Solution Overview
Problem
Semiconductor devices with existing lateral drain source common transistor structures have long wiring distances and high wiring resistance between the source pad electrode and the drain pad electrode, leading to inefficiencies in electrical connections.
Innovation Solution
The semiconductor device incorporates a semiconductor switching device with a lateral drain source common transistor structure featuring a trench-electrode gate structure and connection structures that reduce wiring distance and resistance by utilizing a p-type semiconductor substrate with n-type drift layers and insulation films to enhance electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a lateral drain source common transistor structure is used, then device integration is achieved, but wiring distance and wiring resistance between source pad electrode and drain pad electrode increase
Solution Approach 1:
The patent transitions from a planar two-dimensional electrode arrangement to a three-dimensional structure by having electrodes penetrate through the insulation film vertically. This dimensional change allows the source and drain electrodes to be electrically connected through the insulation barrier, effectively shortening the wiring path and reducing wiring resistance while maintaining device integration.
Solution Approach 2:
The insulation film serves as an intermediary element that enables electrical connection between source and drain electrodes. By introducing this intermediate layer that electrodes can penetrate, the patent resolves the contradiction between maintaining lateral structure integration and reducing wiring distance, as the insulation film facilitates direct vertical connections rather than requiring long lateral paths.
2Adaptability or versatility
If a lateral drain source common transistor structure is used, then device integration is achieved, but wiring resistance between source pad electrode and drain pad electrode increases
Solution Approach 1:
The patent transitions from a planar two-dimensional electrode arrangement to a three-dimensional structure by having electrodes penetrate through the insulation film vertically. This dimensional change allows the source and drain electrodes to be electrically connected through the insulation barrier, effectively shortening the wiring path and reducing wiring resistance while maintaining device integration.
Solution Approach 2:
The insulation film serves as an intermediary element that enables electrical connection between source and drain electrodes. By introducing this intermediate layer that electrodes can penetrate, the patent resolves the contradiction between maintaining lateral structure integration and reducing wiring resistance, as the insulation film facilitates direct vertical connections rather than requiring long lateral paths.
Data Source
AI summary
A semiconductor device includes one and the other wiring groups that are arranged at an interval in a first direction X, the one and the other wiring groups each including first lower wirings and second lower wirings arrayed as stripes extending in the first direction X, a first pad wiring that is arranged over the one and the other wiring groups and is electrically connected to at least one of the first lower wirings of each of the wiring groups, and a second pad wiring that is arranged over the one and the other wiring groups at an interval from the first pad wiring in a second direction Y intersecting the first direction X and is electrically connected to at least one of the second lower wirings of each of the wiring groups.