Semiconductor Device Vertical Stacking Integration
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Solution Overview
Problem
Semiconductor devices face challenges in increasing integration density while maintaining reliability as they process large amounts of data, requiring enhanced connectivity and structural integrity between substrate structures.
Innovation Solution
The semiconductor device design involves a first substrate structure with circuit elements and bonding pads, connected to a second substrate structure with gate electrodes of varying lengths, conductive layers, and contact plugs, along with bonding pads for electrical connection, allowing for increased integration density and reliability through vertical stacking and bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration is increased to process large amounts of data, then productivity is improved, but device complexity increases
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional vertical stacking by bonding a first substrate structure to a second substrate structure. This dimensional change allows circuit elements, gate electrodes, and bonding pads to be arranged in multiple layers, significantly increasing integration density and data processing capability without proportionally increasing device complexity.
Solution Approach 2:
The semiconductor device is divided into separate substrate structures (first substrate and second substrate) that are bonded together. Each substrate can be independently manufactured and optimized, then combined to form the complete high-density integrated device. This segmentation allows complex functionality to be achieved through modular assembly rather than monolithic design.
2Productivity
If multiple substrate structures are bonded together to increase integration density, then productivity is improved, but reliability deteriorates due to bonding interface challenges
Solution Approach 1:
Bonding pads are introduced as intermediary elements at the bonding interfaces between substrate structures. These bonding pads facilitate reliable electrical and mechanical connection between the first and second substrates, ensuring signal integrity and structural stability while enabling the high-density three-dimensional integration.
Solution Approach 2:
The patent employs controlled bonding parameters including bonding temperature, pressure, and alignment precision to ensure reliable junctions between substrate structures. By optimizing these parameters, the bonding interfaces achieve both mechanical strength and electrical conductivity, maintaining reliability while enabling increased integration density.
3Productivity
If gate electrodes are extended by different lengths to improve connectivity, then productivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
Gate electrodes are designed with varying lengths tailored to specific local connectivity requirements. Different regions of the second substrate have gate electrodes extending to different extents to optimize electrical connection with corresponding circuit elements on the first substrate. This localized optimization improves overall device functionality while manageable manufacturing precision through region-specific design.
Data Source
AI summary
A semiconductor device includes a first substrate structure having a first substrate, circuit elements disposed on the first substrate, and first bonding pads disposed on the circuit elements. A second substrate structure is connected to the first substrate structure. The second substrate structure includes a second substrate having first and second surfaces, first and second conductive layers spaced apart from each other, a pad insulating layer having an opening exposing a portion of the second conductive layer and gate electrodes stacked to be spaced apart from each other in a first direction and electrically connected to the circuit elements. First contact plugs extend on the second surface in the first direction and connect to the gate electrodes. A second contact plug extends on the second surface in the first direction and electrically connects to the second conductive layer. Second bonding pads electrically connect to the first and second contact plugs.