Semiconductor Device Vertical Via Conductor Inductance Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices, the use of wire bonding to connect switching elements to lead frame terminals results in curved and bulged wires, making it difficult to shorten the conductive path and reduce inductance.
Innovation Solution
A semiconductor device design featuring a resin layer that encapsulates switching elements and drivers, with conductors extending through the resin layer to connect the elements and drivers directly, reducing the length of the conductive path and inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding is used to connect switching elements to lead frame terminals, then electrical connection is achieved, but the conductive path becomes long and curved, increasing inductance
Solution Approach 1:
The patent transitions from planar wire bonding to three-dimensional vertical vias. The via conductors extend vertically through the encapsulation resin layer, utilizing the height dimension to create direct vertical connections between switching elements and external electrodes, thereby shortening the conductive path and reducing inductance
2Reliability
If wire bonding is used to connect switching elements, then electrical connection is established, but the wires become curved and bulged, making it difficult to shorten the conductive path
Solution Approach 1:
The patent extracts and eliminates the wire bonding process entirely. Instead of using separate wire bonds that require complex curved configurations, the design integrates conductive vias directly into the encapsulation structure, simplifying the overall device architecture and eliminating the need for complex wire routing
Solution Approach 2:
The patent replaces the mechanical wire bonding process with a integrated via conductor system. The via conductors are formed as part of the encapsulation structure through molding, eliminating the need for separate mechanical wire attachment processes and reducing structural complexity
Data Source
AI summary
This semiconductor device includes a first switching element, a second switching element, and a resin layer that seals each switching element. The semiconductor device includes: a power supply electrode which is formed on the surface of the resin layer and of which at least a part overlaps the first switching element when viewed from a z direction; and a power supply via conductor that electrically connects the first switching element and the power supply electrode through the resin layer in the z direction.