Semiconductor Metal Layout With Vertical Vias for Adjacent Routing
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Solution Overview
Problem
Existing semiconductor device layouts face challenges in efficiently connecting adjacent conductors across different metal layers, leading to increased area, power consumption, and capacitance.
Innovation Solution
The implementation of conductive vias and elongated slot vias in specific configurations within the semiconductor device layout allows for efficient connection of adjacent conductors across different metal layers, reducing the need for circuitous routing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional routing methods are used to connect adjacent conductors across different metal layers, then connectivity is achieved, but area consumption increases
Solution Approach 1:
The patent utilizes via structures that extend vertically between metal layers to connect adjacent conductors, transitioning from planar routing to three-dimensional connectivity. This dimensional change allows direct vertical connections through the interlayer dielectric, eliminating the need for circuitous horizontal routing paths and reducing overall layout area.
Solution Approach 2:
The patent introduces via structures as intermediary elements that facilitate connection between adjacent conductors in different metal layers. These via structures act as mediators, enabling direct electrical connection through the interlayer dielectric without requiring complex lateral routing, thereby reducing area consumption and routing complexity.
2Use of energy by moving object
If conventional routing methods are used to connect adjacent conductors across different metal layers, then connectivity is achieved, but power consumption increases
Solution Approach 1:
By implementing vertical via connections between metal layers, the patent shortens the electrical path length compared to conventional lateral routing. This dimensional transition reduces the distance over which signals must travel, thereby reducing resistive power losses and overall power consumption while simplifying the routing structure.
Solution Approach 2:
The via structures serve as efficient intermediary connection elements that provide direct vertical electrical pathways between adjacent conductors in different metal layers. This intermediary approach eliminates long lateral routing paths, reducing the total conductor length and associated power consumption while maintaining connectivity.
3Reliability
If conventional routing methods are used to connect adjacent conductors across different metal layers, then connectivity is achieved, but capacitance increases
Solution Approach 1:
The vertical via connections reduce the lateral spacing between connected conductors by establishing direct vertical pathways through the interlayer dielectric. This dimensional change minimizes the overlap area between adjacent conductors in different layers, thereby reducing parasitic capacitance and improving signal integrity while simplifying the routing architecture.
Solution Approach 2:
The via structures provide direct vertical electrical connection between adjacent conductors, minimizing the interaction distance and overlap area between conductors in different metal layers. This intermediary connection approach reduces parasitic capacitance effects and improves signal integrity by eliminating long lateral routing paths that would increase capacitive coupling.
Data Source
AI summary
A semiconductor device, includes a first metal layer, a second metal layer, and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The at least one conductive via connects the first conductor and the second conductor through the third conductor. The semiconductor device further includes at least one of a first gate electrode that extends in the second direction and is connected to the first conductor, or a drain/source contact that extends in the second direction and is connected to the second conductor.