Semiconductor Via Structure With Air Gap for Thermal Expansion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The thermal expansion of metal conductive materials in semiconductor via portions can cause deformation of the surrounding lattice and upper metal layers, affecting the performance and reliability of semiconductor structures.
Innovation Solution
Incorporating an air gap in the semiconductor structure that exposes to the conductive portion, allowing conductive material to expand into the gap during thermal expansion, thereby preventing lattice deformation and maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal conductive material is filled in the via, then electrical conductivity is achieved, but thermal expansion causes lattice deformation and affects performance
Solution Approach 1:
An air gap is pre-formed around the via portion before conductive material is filled. This air gap serves as a buffer space that absorbs thermal expansion stress during subsequent heating processes, preventing the conductive material from deforming the surrounding lattice and protecting the semiconductor structure from performance degradation
Solution Approach 2:
The air gap acts as an intermediary buffer between the conductive material and the surrounding semiconductor lattice. During thermal expansion, the air gap absorbs the expansion stress, mediating the interaction between the conductive material and the lattice to prevent direct contact and deformation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively mitigates the impact of thermal expansion on semiconductor structures, enhancing their performance and reliability by providing a buffer space for the conductive material, thus reducing the risk of lattice deformation and improving chip yield and design efficiency.
Implementation Method 1
a part of the conductive material of the conductive portion can enter the air gap during the thermal expansion of the conductive material in the via portion
Data Source
Figure 1
Figure 2
Figure 3
AI summary
The disclosure relates to the field of semiconductor technology, and provides a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes a base and a conductive portion that is arranged in the base and includes a via portion and a first conductive layer, where the first conductive layer is connected with the via portion and arranged above the via portion, an air gap is arranged in the base and one end of the air gap is configured to expose the conductive portion.