Semiconductor Device Via-Based Backside Connection
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Solution Overview
Problem
Conventional semiconductor devices with electrodes on the back surface side, joined using metal plates and solder, face limitations in miniaturization due to the thickness of the metal plate and solder, restricting the reduction of device thickness and size.
Innovation Solution
A semiconductor device design featuring semiconductor elements with electrodes on both main and back surfaces, connected via conductors and vias within a sealing resin, eliminating the need for a metal plate and allowing for precise miniaturization by forming vias in the resin, which can be made thinner and more precise than traditional metal connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a metal plate and metal joining material such as solder are used to connect the electrode on the back surface side of the semiconductor element to the substrate, then the connection strength is improved, but the thickness of the joining portion increases and miniaturization is limited
Solution Approach 1:
The patent extracts and eliminates the metal plate from the connection structure. Instead of using a metal plate with solder joints, the invention directly connects the back surface electrode to the substrate through conductive vias formed in the sealing resin, removing the unnecessary metal plate component that increased thickness without adding functional value.
Solution Approach 2:
The patent changes the material parameter of the sealing resin from a simple insulator to a composite material with conductive properties. By forming vias with conductive material within the sealing resin, the resin itself becomes part of the electrical connection path, eliminating the need for separate metal plate and solder layers.
2Stability of the object's composition
If a metal plate is used to connect the back surface electrodes, then the mechanical connection is improved, but the extent of miniaturization is limited due to the metal plate thickness
Solution Approach 1:
The metal plate is extracted from the device structure entirely. The sealing resin with integrated conductive vias replaces the metal plate's connection function, achieving both mechanical stability and electrical connection without the volume penalty of a separate metal plate layer.
Solution Approach 2:
The patent merges the sealing function and electrical connection function into a single integrated structure. The sealing resin simultaneously provides mechanical protection, electrical insulation where needed, and electrical conduction through the vias, eliminating the need for separate metal plate and solder layers.
3Adaptability or versatility
If conventional wire bonding with bonding wires is used to connect electrodes to the substrate, then the connection flexibility is improved, but the device thickness increases due to projecting bonding wires
Solution Approach 1:
The patent transitions from three-dimensional wire bonding (with wires projecting above the surface) to a planar two-dimensional connection structure. The conductive vias are formed within the plane of the sealing resin, allowing electrical connections without vertical projection, thus reducing device thickness while maintaining connection flexibility.
Data Source
AI summary
A semiconductor device includes: a first semiconductor element having a first electrode on a main surface side thereof and a second electrode on a back surface side thereof; a base material provided with a connection conductor connected to the first electrode; a sealing resin provided on the base material to seal the first semiconductor element; and a first via provided in the sealing resin and electrically connected to the second electrode of the first semiconductor element.