Semiconductor Capacitor Via Structure for Crack-Resistant Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The manufacturing of miniaturized semiconductor devices is complicated and prone to issues such as poor electrical interconnection, delamination, and material wastage, leading to high yield loss and increased costs due to the complexity of integrating various components with different materials.
Innovation Solution
A semiconductor structure is designed with a dielectric layer comprising alternately disposed oxide and nitride layers to enhance strength, preventing cracks and delamination, and includes a conductive via and bump structure for reliable electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If miniaturized semiconductor devices are manufactured with multiple components and materials, then functionality and integration are improved, but manufacturing complexity increases leading to poor electrical interconnection and delamination
Solution Approach 1:
The patent applies segmentation by dividing the dielectric layer into multiple sub-layers (first dielectric layer, second dielectric layer, third dielectric layer) with different materials and functions. Each layer is optimized for specific requirements: the first layer provides baseline insulation, the second layer with higher dielectric constant enhances capacitance density, and the third layer provides mechanical support. This segmentation resolves the contradiction by enabling functional integration while managing manufacturing complexity through structured layering.
Solution Approach 2:
The patent employs composite materials by combining different dielectric materials (e.g., silicon oxide, silicon nitride, tantalum oxide) in a multi-layer structure. Each material is selected for its specific properties: low-k materials for signal integrity, high-k materials for capacitance, and mechanically robust materials for delamination prevention. This composite approach enables enhanced functionality while addressing manufacturing challenges through material optimization.
2Adaptability or versatility
If miniaturized semiconductor devices are manufactured with multiple components and materials, then functionality and integration are improved, but yield loss increases due to manufacturing deficiencies
Solution Approach 1:
The patent implements beforehand cushioning by incorporating a third dielectric layer with enhanced mechanical properties over the capacitor structure. This layer acts as a protective cushion that prevents stress concentration and delamination during subsequent manufacturing steps such as CMP, etching, and metallization. By providing this protective layer in advance, the patent prevents yield loss from manufacturing deficiencies while maintaining the functional benefits of miniaturization.
Solution Approach 2:
The patent applies parameter changes by carefully controlling the dielectric constant, thickness, and material composition of each layer to optimize both functionality and manufacturing yield. The third dielectric layer is specifically designed with higher mechanical strength parameters to prevent delamination, while the overall capacitor structure is optimized for high capacitance density. These parameter optimizations enable miniaturization benefits while maintaining high yield.
3Ease of manufacture
If a single dielectric layer is used, then manufacturing is simpler, but mechanical strength is insufficient leading to cracks and delamination
Solution Approach 1:
The patent applies segmentation by dividing the dielectric layer into multiple sub-layers (first dielectric layer, second dielectric layer, third dielectric layer) with different materials and functions. Each layer is optimized for specific requirements: the first layer provides baseline insulation, the second layer with higher dielectric constant enhances capacitance density, and the third layer provides mechanical support. This segmentation resolves the contradiction by enabling functional integration while managing manufacturing complexity through structured layering.
Solution Approach 2:
The patent employs composite materials by combining different dielectric materials (e.g., silicon oxide, silicon nitride, tantalum oxide) in a multi-layer structure. Each material is selected for its specific properties: low-k materials for signal integrity, high-k materials for capacitance, and mechanically robust materials for delamination prevention. This composite approach enables enhanced functionality while addressing manufacturing challenges through material optimization.
Data Source
AI summary
A semiconductor structure includes a substrate; a first dielectric layer disposed over the substrate; a conductive member surrounded by the first dielectric layer; a second dielectric layer disposed over the substrate, the first dielectric layer and the conductive member; a capacitor disposed over the conductive member and the second dielectric layer; a third dielectric layer disposed over the second dielectric layer and the capacitor; a conductive via disposed over and contacted with the conductive member, and extended through the second dielectric layer, the capacitor and the third dielectric layer; a conductive pad disposed over and contacted with the conductive via; a fourth dielectric layer disposed over the third dielectric layer and surrounding the conductive pad; and a conductive bump disposed over and electrically connected to the conductive pad, wherein the third dielectric layer includes an oxide layer and a nitride layer.