Semiconductor Power Via Structure With Dummy Isolation Buffering

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Solution Overview

Problem

Semiconductor devices face challenges in achieving high integration, reliability, and electrical properties due to complex manufacturing processes and the need for high-speed, multi-functional designs.

Innovation Solution

A semiconductor device design incorporating a substrate with dummy regions, trench isolation, and a power delivery network layer, along with a through via that extends from the power delivery network layer to the power line, enhancing electrical connectivity and reliability through a dielectric structure with protrusions and troughs, and a tap cell configuration that buffers voltage application.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high integration is implemented to meet electronic industry requirements, then device functionality and speed improve, but manufacturing complexity and reliability challenges increase

Engineering Contradiction:

Improvedevice functionalityVSAvoidmanufacturing complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The substrate is divided into active regions and dummy regions, with the dummy region further segmented into multiple sub-regions. This segmentation allows the complex device to be managed as separate functional units, reducing overall manufacturing complexity while maintaining high integration benefits.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are assigned different properties: active regions contain functional circuit elements while dummy regions contain non-functional structures. This local differentiation enables high integration in active areas while using dummy structures to manage stress and manufacturing variations locally, without affecting overall device complexity.

Inventive Principle:

Principle #3Local quality

2Productivity

If high integration is implemented, then device functionality improves, but electrical reliability deteriorates due to increased complexity

Engineering Contradiction:

Improvedevice functionalityVSAvoidelectrical reliability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

Dummy regions act as intermediary structures between active regions. These dummy regions with their specific stress characteristics serve as buffer zones that mediate the electrical and mechanical environment, protecting active regions from stress-induced reliability issues while allowing high integration.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

Dummy regions are placed beforehand in strategic locations to cushion and absorb stress before it can affect active regions. This preemptive stress management ensures electrical reliability is maintained even as integration density increases.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If dummy regions are added to the substrate, then stress control and reliability improve, but device area and integration density worsen

Engineering Contradiction:

Improvestress controlVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

Instead of uniformly distributing dummy regions across the entire substrate, the invention applies dummy regions selectively in specific locations where stress control is most needed. This partial application provides sufficient stress management while minimizing the total area consumed by dummy structures, preserving integration density.

Inventive Principle:

Principle #16Partial or excessive action

4Reliability

If complex structures like through vias and dielectric structures are added, then electrical connectivity and voltage stability improve, but manufacturing complexity and process difficulty worsen

Engineering Contradiction:

Improvevoltage stabilityVSAvoidprocess difficulty

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

Dielectric structures with protrusions are formed in advance during earlier manufacturing stages, before through vias are created. This preliminary formation of the dielectric structure simplifies subsequent via formation processes and reduces overall manufacturing complexity despite the added structural complexity for voltage stability.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS20240290790A1Semiconductor device and method of fabricating the same

Publication Date: 2024.08.29 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device may include a substrate including a first dummy region and a second dummy region spaced apart from each other and a trench between the first dummy region and the second region, a device isolation layer filling the trench between the first dummy region and the second dummy region, a dielectric structure on the device isolation layer; an interlayer dielectric layer on the dielectric structure, a power line on the interlayer dielectric layer, a power delivery network layer on a bottom surface of the substrate, and a through via extending from the power delivery network layer through the dielectric structure to the power line. An upper portion of the device isolation layer may include a protrusion and a trough, and the dielectric structure may cover the protrusion and the trough.