Semiconductor Via Grid Structure Mitigates Thermal Protrusion
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Solution Overview
Problem
The protrusion of conductive via from the substrate due to thermal expansion affects the flatness and performance of semiconductor structures, particularly in vertical interconnect stacking packaging methods.
Innovation Solution
A semiconductor structure is designed with a conductive via surrounded by a grid structure formed by intersecting metal lines from first and second conductive type transistors, which are disposed on either side of the via in perpendicular directions, to mitigate protrusion and enhance electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive via is used for vertical interconnect stacking packaging, then short-range interconnection and high-density integration are achieved, but conductive via protrudes outward from substrate after thermal expansion affecting flatness
Solution Approach 1:
The patent segments the conductive via structure by introducing a barrier layer between the conductive via and the substrate. This barrier layer acts as a separate functional component that prevents direct thermal interaction, thereby preventing via protrusion while maintaining the high-density integration benefit
Solution Approach 2:
The barrier layer serves as an intermediary element between the conductive via and the substrate. It mediates the thermal expansion issue by providing a protective interface that prevents the via from protruding into the substrate, thus resolving the contradiction between high-density integration and substrate flatness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The grid structure prevents conductive via protrusion during thermal expansion, improving the flatness and performance of semiconductor structures by maintaining substrate integrity and increasing conduction speed while reducing power consumption.
Implementation Method 1
a conductive via tends to protrude outward from a substrate after thermal expansion
Data Source
AI summary
A semiconductor structure includes: a substrate; a conductive via, a first conductive type transistor, and a second conductive type transistor located in substrate; a first metal layer located on substrate; and a second metal layer located on first metal layer. The first conductive type transistor is disposed on two sides of conductive via in first direction, and second conductive type transistor is disposed on two other sides of conductive via in a second direction perpendicular to first direction. The first metal layer includes at least one first metal line extending in first direction and electrically connected to a gate of first conductive type transistor. The second metal layer includes at least one second metal line extending in second direction and electrically connected to a gate of second conductive type transistor. The first metal line and second metal line intersect with each other to form a grid structure covering conductive via.