Semiconductor Device Via-Hole Layout for Emitter Resistance

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Solution Overview

Problem

In semiconductor devices, the limited arrangement of via-holes due to the configuration of the lower-layer electrode restricts the number of transistors that can be efficiently connected, leading to high emitter resistances and reduced gain characteristics, especially in high-output operations.

Innovation Solution

A semiconductor device configuration where input capacitive elements, emitter common wiring lines, and collector common wiring lines are arranged in a specific order, allowing via-holes to overlap the emitter common wiring line without being restricted by the input capacitive elements, thereby reducing emitter resistance without increasing collector resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the lower-layer electrode of the matching capacitor is arranged in a direction in which the plurality of transistors are arranged so that the via-hole is arranged between the lower-layer electrode and the transistor row, then the radio-frequency signal is uniformly distributed, but the number of via-holes is limited and transistors distant from the via-hole have high emitter resistances

Engineering Contradiction:
Improvesignal uniformityVSAvoidemitter resistance
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the spatial arrangement from a linear configuration to a two-dimensional grid pattern, where via-holes are distributed across multiple layers and positions. This dimensional expansion allows via-holes to be placed closer to all transistors simultaneously, reducing emitter resistance while maintaining signal uniformity through the structured distribution pattern.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the via-hole distribution into multiple segments or groups, with different via-holes serving different transistor regions. This segmentation allows each transistor to be connected to nearby via-holes, reducing the distance and resistance for signal transmission while maintaining overall signal uniformity across the device.

Inventive Principle:
Principle #1Segmentation

2Reliability

If the number of via-holes is increased to reduce emitter resistance, then gain characteristics improve, but the configuration complexity increases

Engineering Contradiction:
Improvegain characteristicsVSAvoidvia-hole configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent designs a universal via-hole pattern that serves multiple functions: it provides low-emitter-resistance connections for all transistors, maintains signal uniformity, and follows a regular geometric pattern that simplifies manufacturing. This multi-functional design allows increased via-hole count without proportionally increasing complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent optimizes via-hole parameters such as diameter, depth, spacing, and distribution pattern to achieve the desired electrical characteristics. By carefully controlling these parameters, the patent reduces emitter resistance and improves gain while maintaining a manageable configuration that can be manufactured with standard processes.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11610883B2Semiconductor device
Publication Date: 2023.03.21 MURATA MFG CO LTD
  • US11610883B2 patent drawing
  • US11610883B2 patent drawing
  • US11610883B2 patent drawing

AI summary

A semiconductor device includes a plurality of unit transistors that are arranged on a surface of a substrate in a first direction. Input capacitive elements are arranged so as to correspond to the unit transistors. An emitter common wiring line is connected to emitter layers of the unit transistors. A via-hole extending from the emitter common wiring line to a back surface of the substrate is disposed at a position overlapping the emitter common wiring line. A collector common wiring line is connected to collector layers of the unit transistors. The input capacitive elements, the emitter common wiring line, the unit transistors, and the collector common wiring line are arranged in this order in a second direction. Base wiring lines that connect the input capacitive elements to base layers of the corresponding unit transistors intersect the emitter common wiring line without physical contact.