Semiconductor Via Layout for Dense Transistor Integration

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Solution Overview

Problem

The increasing demand for high-reliability, high-speed, and multifunctional semiconductor devices with complex structures poses challenges in miniaturization and integration, particularly in achieving compact sizes while maintaining manufacturing efficiency and reducing costs.

Innovation Solution

A semiconductor device design featuring a substrate with distinct via regions and transistor regions, where via structures extend through an insulating layer and substrate, allowing for dense transistor placement without via structures in the transistor region, thereby reducing device size and improving manufacturing yield and cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If via structures are integrated with transistor regions to reduce device area, then device size is reduced, but manufacturing complexity and yield issues increase

Engineering Contradiction:
Improvedevice sizeVSAvoidstructure complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The device is divided into distinct via regions and transistor regions, with via structures confined to dedicated via regions. This segmentation allows transistors to be densely packed in transistor regions without the complexity of integrating via structures, while via regions handle interconnect functions separately, thus reducing overall device size without compromising manufacturing yield.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Via structures are extracted from the transistor region and placed exclusively in dedicated via regions. This extraction eliminates the manufacturing complexity and yield issues associated with integrating via structures directly with transistors, while still achieving compact device size through optimized region layout.

Inventive Principle:
Principle #2Taking out (Extraction)

2Productivity

If transistors are densely packed to improve integration, then productivity increases, but manufacturing precision requirements increase

Engineering Contradiction:
Improveintegration densityVSAvoidtransistor placement precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

By segmenting the device into via regions and transistor regions, transistors can be densely packed in transistor regions with standardized, simplified placement patterns. The via structures are confined to separate via regions, reducing the precision requirements for transistor placement while maintaining high integration density.

Inventive Principle:
Principle #1Segmentation

3Reliability

If via structures are separated from transistor regions, then manufacturing yield improves, but device area increases

Engineering Contradiction:
Improvemanufacturing yieldVSAvoiddevice size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

Via regions and transistor regions are merged into a unified device structure with optimized layout. The via structures are placed in dedicated via regions adjacent to or overlapping with transistor regions, allowing manufacturing yield to improve through separation while minimizing the overall device area through efficient spatial arrangement.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The device layout utilizes two-dimensional optimization where via regions and transistor regions are arranged in complementary patterns. This allows via structures to be separated from transistors for improved manufacturing yield while maintaining compact device footprint through efficient use of available space in the planar layout.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12199015B2Semiconductor device including via structure and method for manufacturing the same
Publication Date: 2025.01.14 SAMSUNG ELECTRONICS CO LTD
  • US12199015B2 patent drawing
  • US12199015B2 patent drawing
  • US12199015B2 patent drawing

AI summary

A semiconductor device according to some example embodiments includes a substrate, an insulating structure covering the substrate, a transistor between the substrate and the insulating structure, a via insulating layer extending through the insulating structure and the substrate, a plurality of via structures extending through the via insulating layer, a plurality of conductive structures respectively connected to the plurality of via structures, and a plurality of bumps respectively connected to the conductive structures.