Semiconductor Via Structure Layout for Higher Integration in Less Area
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing demand for high-reliability, high-speed, and multifunctional semiconductor devices has led to more complex structures and higher integration levels, posing challenges in reducing the size of semiconductor devices while maintaining performance.
Innovation Solution
The semiconductor device design includes a substrate with an insulating structure, transistors between the substrate and the insulating structure, via insulating layers, and via structures extending through these layers, allowing for a dense arrangement of transistors without via structures, thereby reducing the overall size of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If via structures are densely arranged to support high integration, then device functionality is improved, but device size increases
Solution Approach 1:
The patent transitions from planar 2D arrangement of via structures to a 3D vertical arrangement by extending via structures through multiple insulating layers and forming via holes at different depths and positions. This dimensional change allows multiple via structures to be stacked vertically, increasing functionality without proportionally increasing the planar device area.
Solution Approach 2:
The patent implements nesting by placing via structures within via insulating layers, which are themselves embedded within the substrate and insulating structure. Multiple via holes are nested at different levels within the vertical stack, allowing compact arrangement of multiple functional elements in a limited space volume.
2Productivity
If transistor density is increased to improve integration, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the device into distinct functional regions: transistor regions where transistors are formed, and via regions where via structures are formed. This segmentation allows independent optimization of each region and simplifies manufacturing by enabling separate processing steps for transistors and via structures, reducing overall manufacturing complexity despite high integration.
Solution Approach 2:
The patent applies local quality by creating via insulating layers with different properties in different regions. The via insulating layer has specific dielectric properties tailored for via regions, while transistor regions have optimized structures for electrical performance. This localized optimization allows high integration without uniformly increasing complexity across the entire device.
Data Source
AI summary
A semiconductor device according to some example embodiments includes a substrate, an insulating structure covering the substrate, a transistor between the substrate and the insulating structure, a via insulating layer extending through the insulating structure and the substrate, a plurality of via structures extending through the via insulating layer, a plurality of conductive structures respectively connected to the plurality of via structures, and a plurality of bumps respectively connected to the conductive structures.