Semiconductor Package Via Layout for Thermal Resistance Reduction
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Solution Overview
Problem
Current semiconductor devices face challenges in efficiently dissipating heat due to limitations in metal density and thermal resistance in their packaging structures, which affects their performance and reliability.
Innovation Solution
The semiconductor device incorporates a conductive frame with a specific layout of first and second electrical vias and a connecting pattern on a passivation layer, along with thermal conductive vias, to enhance heat dissipation by increasing metal density and optimizing the connection between vias, thereby reducing thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional packaging structures are used, then device complexity is low, but thermal resistance is high and heat dissipation efficiency is poor
Solution Approach 1:
The packaging structure is segmented into multiple functional layers including a first packaging layer with first vias, a second packaging layer with second vias, and a third packaging layer with third vias. Each layer is positioned at different heights and performs specific functions in the heat dissipation pathway, allowing optimized thermal management without excessive overall complexity
Solution Approach 2:
The patent transitions from conventional two-dimensional heat dissipation to three-dimensional heat dissipation by stacking multiple packaging layers at different heights. The first, second, and third vias are arranged in vertical and horizontal dimensions, creating a multi-dimensional thermal conduction network that significantly reduces thermal resistance
2Temperature
If metal density is increased to improve heat dissipation, then thermal resistance decreases, but manufacturing complexity increases
Solution Approach 1:
The metal structure is segmented into multiple via types (first vias, second vias, third vias) distributed across different packaging layers. This segmentation allows selective optimization of metal density in different regions and layers, improving heat dissipation where needed while maintaining manufacturability through standardized via formation processes
Solution Approach 2:
The patent implements a nested via structure where second vias are positioned within regions defined by first vias, and third vias are positioned within regions defined by second vias. This nested arrangement increases effective metal density and thermal conduction pathways without proportionally increasing manufacturing steps, as vias are formed through sequential patterning and filling processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces thermal resistance by up to 34% compared to reference designs, improving the heat dissipation efficiency and overall performance of semiconductor packages.
Implementation Method 1
The connecting pattern is disposed on the passivation layer and connects the first electrical conductive vias and the thermal conductive vias
Implementation Method 2
thermal conductive vias, and a connecting pattern disposed on the passivation layer and connects the first electrical conductive vias and the thermal conductive vias
Data Source
AI summary
A semiconductor package includes a die, a passivation layer, a plurality of first electrical conductive vias, a plurality of second electrical conductive vias, a plurality of thermal conductive vias and a connecting pattern. The die includes a plurality of first pads and a plurality of second pads. The passivation layer is disposed on the die. The first electrical conductive vias and the second electrical conductive vias extend through the passivation layer and contact the first pads and the second pads respectively. The thermal conductive vias are disposed on the passivation layer. Each of the thermal conductive vias is spaced apart from the first and second electrical conductive vias. The connecting pattern is disposed on the passivation layer and connects the first electrical conductive vias and the thermal conductive vias. The thermal conductive vias are connected to the first pads through the connecting pattern and the first electrical conductive vias.