Semiconductor Via Plug Structure for Low-Capacitance Contact Routing
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Solution Overview
Problem
As semiconductor devices scale down, there is a need to improve device performance and reliability by reducing capacitance and enhancing electrical stability between contacts, while effectively managing the short channel effect and current control without increasing gate length.
Innovation Solution
A semiconductor device design featuring a gate structure with a gate electrode, source/drain pattern, and wiring structure that includes via plugs and wiring lines, where the via plugs have specific conductive film structures and materials like tungsten, and the wiring structure connects source/drain and gate contacts to enhance electrical connectivity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the pitch size of the semiconductor device is decreased to increase density, then device scaling is improved, but capacitance between contacts increases and electrical stability deteriorates
Solution Approach 1:
The via plug is segmented into multiple conductive film layers (first conductive film, second conductive film, third conductive film) with different materials and properties. This segmentation allows each layer to serve specific functions: the tungsten-based first conductive film provides low resistance, the copper-based second conductive film provides excellent electrical conductivity, and the aluminum-based third conductive film provides good planarity and connectivity, thereby maintaining electrical stability during pitch scaling.
Solution Approach 2:
The via plug employs a composite structure combining multiple conductive materials (tungsten, copper, aluminum) in specific layers. This composite material approach leverages the advantages of each material to achieve optimal electrical performance and reliability, resolving the contradiction between reduced pitch size and maintained electrical stability.
2Reliability
If the gate length is increased to suppress short channel effect, then potential control is improved, but device scaling and density are reduced
Solution Approach 1:
The invention changes the material parameters and structural composition of the via plug, using multi-layer conductive films with different electrical properties. This parameter optimization improves overall device performance and electrical stability, allowing for effective short channel effect management without requiring increased gate length, thereby maintaining high device density.
3Ease of manufacture
If a simple single-layer via plug structure is used to simplify manufacturing, then ease of manufacture is improved, but electrical stability and current control capability are reduced
Solution Approach 1:
The via plug is divided into multiple conductive film layers, each with specific materials and functions. This segmentation enables optimized electrical performance and reliability while maintaining a systematic manufacturing process that can be integrated into existing fabrication workflows.
Solution Approach 2:
Different regions of the via plug have different material compositions tailored to specific functional requirements: the lower portion uses tungsten for mechanical strength and low resistance, the middle portion uses copper for excellent electrical conductivity, and the upper portion uses aluminum for good planarity and connectivity. This local quality optimization achieves superior electrical stability without excessive manufacturing complexity.
Data Source
AI summary
A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.