Semiconductor Via Recess Structure for Protected Vertical Wiring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The manufacturing process for semiconductor components, particularly X-ray detector modules, faces challenges in simplifying and enhancing testability while ensuring robustness and stability of connecting elements, which are prone to mechanical stress and can affect electrical performance.
Innovation Solution
A method involving the creation of a recess for a via in a semiconductor component, including forming a blind hole, applying a third insulation layer to protect the first insulation layer during anisotropic etching, and forming a conductor track with a passivation layer to ensure mechanical stability and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vias are used as connecting elements to transmit signals, then electrical connectivity is improved, but the structure of the sensor chip or semiconductor component may be damaged during via formation
Solution Approach 1:
The patent applies preliminary action by forming a recess in the semiconductor component before forming the via. This recess serves as a pre-prepared cavity that guides the via formation process, preventing damage to the surrounding semiconductor structure. The recess is formed to a controlled depth and then filled with conductive material to create the via, ensuring that the via formation process does not compromise the integrity of the sensor chip or underlying structures.
2Reliability
If the active pixel area is made as large as possible to detect more X-ray radiation, then detection capability is improved, but wiring that limits the usable area becomes more disruptive
Solution Approach 1:
The patent resolves the wiring complexity issue by transitioning from planar wiring to vertical wiring through the use of vias. Instead of routing connections horizontally across the semiconductor surface, which would consume valuable pixel area, the invention uses vertical vias to pass signals through the semiconductor substrate to underlying layers. This dimensional change allows wiring to occur in the vertical dimension, freeing up the horizontal pixel area for detection while maintaining necessary electrical connections.
3Strength
If connecting elements are made robust against mechanical stress, then mechanical stability is improved, but electrical performance may be affected through resistance or leakage currents
Solution Approach 1:
The patent employs composite materials in the via structure to simultaneously achieve mechanical robustness and electrical performance. The via consists of a conductive fill material (such as metal) providing electrical connectivity, surrounded by an insulating material that provides mechanical support and stress distribution. This composite structure allows the via to withstand mechanical stress while maintaining low resistance and preventing leakage currents, as the insulating material protects the conductive core from degradation under stress.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the testability and mechanical robustness of semiconductor components, preventing damage to insulation layers and ensuring reliable electrical connections without compromising performance.
Implementation Method 1
Subsequently, an anisotropic vertical etching, i.e. transversely to the layer sequence, of the second electrical insulation layer takes place until the contact area to the semiconductor substrate is exposed
Data Source
Figure 1~3
Figure 4~6
Figure 7~9
AI summary
A method for producing a recess for a via in a semiconductor component is described. The semiconductor component has a semiconductor substrate. The semiconductor component comprises a first electrical insulation layer on its front side, a second electrical insulation layer on the first electrical insulation layer, and a contact area for the semiconductor substrate in or on the second electrical insulation layer. In the method, a blind-hole-like recess is formed through the semiconductor substrate up to the first electrical insulation layer. The first electrical insulation layer is removed within the recess. The recess is widened toward the contact area by partially removing the second electrical insulation layer.A third electrical insulation layer is applied to the inner walls of the extended recess, covering the first electrical insulation layer toward the extended recess. Finally, the second electrical insulation layer is anisotropically vertically etched toward the contact area until the contact area is exposed to the semiconductor substrate. The invention further relates to a method for producing a via in a semiconductor component, a semiconductor component, and an X-ray detector module.