3D Semiconductor Via Layout for Uniform Proton Diffusion
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving uniform performance and reliability due to variations in via hole density and proton concentration across different regions, which affect the performance and consistency of circuit elements.
Innovation Solution
The semiconductor device incorporates a specific design with a cell structure and peripheral structure where the density of via holes on the pad region is made substantially equivalent to that on the cell region, and proton (H+) diffusion is optimized through carefully designed barrier layers and via holes to ensure uniform proton concentration across the circuit elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If via hole density is increased in the cell region to improve proton concentration, then proton diffusion is enhanced, but via hole density becomes non-uniform across different regions
Solution Approach 1:
The patent applies local quality by differentiating via hole density between regions: the pad region has a first via hole density while the cell region has a second via hole density. This allows each region to have optimized via hole density for its specific function, with the pad region having higher density for better proton supply to circuit elements.
Solution Approach 2:
The patent changes the parameter of via hole density to resolve the contradiction. By adjusting via hole density differently in the pad region versus the cell region, the patent achieves uniform proton concentration across all regions while maintaining manufacturing feasibility through controlled parameter variation.
2Reliability
If via hole density is increased to improve proton diffusion, then circuit element performance is enhanced, but device complexity increases due to different via hole densities in different regions
Solution Approach 1:
The patent segments the substrate into distinct regions (pad region and cell region) with different via hole density characteristics. This segmentation allows optimized proton diffusion in each region without requiring complex global adjustments, simplifying the overall device design while improving performance.
Solution Approach 2:
The via hole structure serves multiple functions: in the pad region, high via hole density provides proton supply to circuit elements, while in the cell region, the via holes serve both proton diffusion and structural integration functions. This multi-functionality reduces device complexity by using a single via hole system for multiple purposes.
3Reliability
If barrier layers are added to control proton diffusion, then proton concentration uniformity is improved, but manufacturing complexity increases
Solution Approach 1:
The patent introduces barrier layers as intermediary structures between the substrate and overlying layers. These barrier layers mediate proton diffusion by controlling the flow path and concentration, achieving uniform proton distribution while maintaining ease of manufacture through standard layered fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the uniform performance of circuit elements and improves the reliability of the semiconductor device by maintaining consistent proton concentration and via hole density, leading to improved operational consistency.
Implementation Method 1
proton (H+) diffusion is optimized through carefully designed barrier layers and via holes to ensure uniform proton concentration across the circuit elements
Data Source
AI summary
According to an aspect of the present disclosure, a semiconductor device includes a peripheral structure, and a cell structure stacked on the peripheral structure. The cell structure includes a first substrate including a pad region and a cell region including a cell array region and an extending region, wherein the first substrate includes a first surface and a second surface opposite to the first surface, and wherein second surface faces the peripheral structure, a gate stacking structure including a plurality of gate electrodes and a plurality of interlayer insulating layers alternately stacked on the second surface of the first substrate, a channel structure disposed on the cell array region and penetrating the plurality of gate electrodes and the plurality of interlayer insulating layers, a plurality of gate contacts disposed on the extending region and connected to the plurality of gate electrodes, respectively, a cell insulation layer positioned over the second surface of the first substrate and covering the gate stacking structure, and an input/output contact disposed on the pad region and penetrating the cell insulation layer. The peripheral structure includes a second substrate electrically connected to the first substrate, a plurality of circuit elements positioned on the second substrate, a first barrier structure positioned over the second substrate and including a plurality of lower barrier layers, a plurality of first via holes disposed on the cell region and the pad region and penetrating at least one of the plurality of lower barrier layers, a plurality of second via holes disposed on the cell region and penetrating at least one of the plurality of lower barrier layers, and a plurality of contact vias positioned within the plurality of first via holes and connected to the plurality of circuit elements. In at least one lower barrier layer of the plurality of lower barrier layers, a sum of areas of at least one of the plurality of first via holes per unit area on the pad region is equal to a sum of areas of at least one of the plurality of first via holes on the cell region and areas of the plurality of second via holes per unit area on the cell region.