3D Semiconductor Via Layout With Rear Redistribution Offset

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Solution Overview

Problem

The design of three-dimensional semiconductor devices with through-silicon vias (TSV) faces challenges in aligning TSV regions of heterogeneous chips, limiting design freedom and efficiency in stacking semiconductor chips.

Innovation Solution

The semiconductor device incorporates a rear redistribution layer that electrically connects second through-vias on a base chip to first through-vias on a stacked chip, allowing for horizontal misalignment while maintaining vertical alignment, thereby enhancing design freedom for the TSV region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If TSV regions of heterogeneous chips are vertically aligned, then manufacturing precision is improved, but design freedom is limited

Engineering Contradiction:
ImproveTSV alignment precisionVSAvoiddesign freedom
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

A rear redistribution layer is introduced as an intermediary between the second through-vias in the base chip and the first through-vias in the stacked chip. This redistribution layer enables horizontal offset between TSV regions while maintaining vertical alignment through the intermediary connection, thus resolving the contradiction between alignment precision and design freedom

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent separates the alignment function into different dimensions: vertical alignment is maintained for electrical connection through the stacked chips, while horizontal offset is enabled through the rear redistribution layer. This dimensional separation allows TSV regions to be offset in the horizontal plane without compromising vertical alignment requirements

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If TSV regions are horizontally offset, then design freedom is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvedesign freedomVSAvoidTSV region configuration
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The rear redistribution layer serves as a mediator that simplifies the overall device complexity by providing a standardized interface between offset TSV regions. Instead of complex direct alignment requirements, the redistribution layer offers a systematic approach to handling horizontal offsets, making the configuration more manageable

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If rear pads are spaced apart from second through-vias, then design flexibility is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedesign flexibilityVSAvoidpad and via alignment
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The rear redistribution layer acts as an intermediary between the second through-vias and rear pads, allowing horizontal spacing between them. The redistribution layer provides the necessary electrical connection while accommodating the spatial separation, thus enabling design flexibility without excessive precision requirements for pad-to-via alignment

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250038151A1Semiconductor device with electrical vias
Publication Date: 2025.01.30 SAMSUNG ELECTRONICS CO LTD
  • US20250038151A1 patent drawing
  • US20250038151A1 patent drawing
  • US20250038151A1 patent drawing

AI summary

According to some implementations, provided is a semiconductor device including: a first semiconductor chip including first through-vias, and first front pads electrically connected to the first through-vias; and a second semiconductor chip disposed below the first semiconductor chip, and including a substrate, a circuit layer disposed below the substrate, second front pads below the circuit layer, rear pads disposed on the substrate and electrically connected to the corresponding first front pads, second through-vias penetrating through the substrate and electrically connected to the second front pads, and a rear redistribution layer electrically connecting the second through-vias and the rear pads, wherein at least one of the rear pads is spaced apart from a corresponding one of the second through-vias in a horizontal direction, and overlaps a corresponding one of the first through-vias in a vertical direction.