Semiconductor Via Structure With Top-and-Sidewall Contact
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Solution Overview
Problem
Current semiconductor structures face poor interconnection performance due to limited contact area between via interconnection structures and conductive function layers, leading to high contact resistance.
Innovation Solution
A semiconductor structure and forming method that include a blocking structure segmented between conductive function layers, with a via interconnection structure that contacts both the top and side walls of the conductive function layers, increasing the contact area and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional via interconnection structure is used that only contacts the top of the conductive function layer, then the manufacturing process is simple, but the contact area is limited leading to high contact resistance
Solution Approach 1:
The via interconnection structure transitions from a conventional top-only contact to a multi-dimensional contact configuration. The via extends through the top dielectric layer and contacts both the top surface and the side wall of the conductive function layer, utilizing vertical and lateral dimensions simultaneously to increase contact area and improve interconnection performance
Solution Approach 2:
The blocking structure segments the conductive function layer into multiple regions, creating distinct contact zones. This segmentation allows the via interconnection structure to contact specific segmented regions on the top and side walls, optimizing the contact configuration for reduced resistance while maintaining manufacturing feasibility
2Reliability
If the via interconnection structure contacts only the top of the conductive function layer, then the manufacturing process is straightforward, but the contact area is insufficient leading to high contact resistance
Solution Approach 1:
The blocking structure is formed in advance within the conductive function layer before the via interconnection structure is created. This preliminary action defines the contact zones and facilitates subsequent via formation, making the multi-dimensional contact achievable through a systematic manufacturing process that builds complexity incrementally
3Reliability
If a blocking structure is introduced to segment the conductive function layer, then the via can contact side walls to increase contact area, but the device structure becomes more complex
Solution Approach 1:
The blocking structure serves multiple functions: it segments the conductive function layer to define contact zones, provides a reference for via positioning, and enables the via interconnection structure to achieve multi-dimensional contact. This multi-functionality justifies the additional structural element by delivering multiple benefits from a single feature
Data Source
AI summary
A semiconductor structure and a forming method thereof are provided, and the forming method includes: providing a base; forming, on the base, a plurality of conductive function layers extending in a first direction and sequentially arranged in a second direction, a bottom dielectric layer located on the base between the conductive function layers, and a blocking structure located in the conductive function layer, the blocking structure segmenting the conductive function layers located on two sides of the blocking structure in the first direction; forming a top dielectric layer covering the bottom dielectric layer, the conductive function layers, and the blocking structure; etching the top dielectric layer located above a junction of the blocking structure and the conductive function layer and a part of the blocking structure located at a side wall of the conductive function layer, to form a via running through the top dielectric layer and exposing a part of a top and a part of a side wall of the conductive function layer; and filling the via with a via interconnection structure, the via interconnection structure being in contact with the part of the top and the part of the side wall of the conductive function layer. Therefore, embodiments of the present disclosure are helpful to improve the performance of the semiconductor structure.