Semiconductor Via Structure With Sintered Fill for Reliable Bonding
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Solution Overview
Problem
The connection reliability of the wiring layer in semiconductor devices is insufficient due to concave parts formed during electroplating, leading to unstable bonding and potential voids in the bonding material, which affects electrical and mechanical connections.
Innovation Solution
The wiring layer is separately formed from the via, using conductive sintered material to fill via holes, resulting in a flat surface and improved bonding area, and the vias are designed with a tapered shape to enhance contact with semiconductor elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If electroplating is used to integrally form the wiring layer and via, then the manufacturing process is simplified, but concave parts are formed in the wiring layer reducing connection reliability
Solution Approach 1:
The patent divides the wiring layer and via into separate formation processes. The wiring layer is formed first by electroplating, then via holes are drilled and filled with conductive material in a separate step. This segmentation prevents the concave part formation issue while maintaining manufacturing efficiency.
Solution Approach 2:
The wiring layer is formed in advance before via hole formation. By completing the wiring layer electroplating first and then drilling via holes, the patent avoids the concave part problem that would occur if vias were formed simultaneously. This preliminary action ensures the wiring layer surface remains intact.
2Reliability
If a flat wiring layer surface is maintained, then bonding material fluidity is improved, but via hole filling becomes more difficult
Solution Approach 1:
Via holes are drilled through the already-formed flat wiring layer, and the filling process is performed as a separate preliminary step before bonding. This sequence maintains the flat surface for bonding while allowing proper via hole filling with conductive material.
Solution Approach 2:
The patent uses tapered via holes with larger diameter at the bottom to facilitate conductive material filling. The taper ratio is controlled to ensure complete filling while maintaining a flat upper surface of the wiring layer for subsequent bonding operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the connection reliability by maintaining fluidity of the bonding material and increasing the bonding area, reducing voids and improving the stability of electrical and mechanical connections.
Implementation Method 1
the via including conductive sintered material
Data Source
AI summary
A semiconductor device includes an insulation base material, a wiring layer, a via, and a semiconductor element. The insulation base material includes an insulating layer including an adhesive agent layer formed on one surface of the insulating layer. The wiring layer is formed on the one surface of the adhesive agent layer. The via is separately formed from the wiring layer, and penetrates through the insulating layer and the adhesive agent layer, to be connected with the wiring layer. The via includes conductive sintered material. The semiconductor element is connected with another end of the via on an opposite side of one end of the via, the one end being connected with the wiring layer, on another surface of the insulating layer.