Semiconductor Via Trench Charge Release for Galvanic Corrosion
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Solution Overview
Problem
As semiconductor devices undergo miniaturization, the reduction in feature sizes leads to issues such as surface potential differences between conductive materials in trenches and vias, causing galvanic corrosion and performance degradation, which affects integration density and reliability.
Innovation Solution
Applying a treatment chemical with low conductivity, such as isopropyl alcohol, to release surface charges and reduce potential differences, followed by a cleaning solution with an oxidizer and solvent to remove residues, thereby reducing galvanic corrosion and improving interconnection performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are reduced to improve integration density, then more components can be integrated into a given area, but surface potential differences between conductive materials cause galvanic corrosion and reliability degradation
Solution Approach 1:
A dielectric material is introduced as an intermediary substance between different conductive materials (e.g., copper and aluminum) in the semiconductor interconnect structure. This dielectric layer physically separates the conductive materials, preventing direct electrical contact and eliminating the galvanic corrosion pathway, thereby resolving the reliability issue while maintaining miniaturization benefits
Solution Approach 2:
The patent addresses the harmful effect of surface potential differences by applying chemical treatments (such as plasma treatment or chemical baths) to modify the surface properties of conductive materials. This converts the potentially harmful surface conditions into a beneficial state by reducing surface charge accumulation and minimizing galvanic corrosion susceptibility
2Productivity
If feature sizes are reduced to improve integration density, then manufacturing complexity increases due to additional process control requirements
Solution Approach 1:
The dielectric material is deposited between conductive layers during the interconnect formation process, before the conductive materials are fully assembled. This preliminary action of placing the protective dielectric layer early in the manufacturing sequence simplifies subsequent processing by pre-establishing the corrosion prevention structure, rather than requiring additional corrective steps later
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the failure rate due to copper extrusion defects and enhances the reliability and yield of semiconductor devices by minimizing surface potential differences and oxidation-reduction reactions.
Implementation Method 1
applying a first treatment chemical to release surface charges from within the via opening and the trench opening
Implementation Method 2
applying a cleaning solution to the via opening and the trench opening... minimizing surface potential differences and oxidation-reduction reactions
Data Source
AI summary
An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.