Semiconductor Device With Void Insulator

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Solution Overview

Problem

Semiconductor devices, such as MOSFETs, face challenges in reducing power consumption and improving switching speed while maintaining breakdown voltage and reliability, particularly due to high on-resistance and switching losses associated with capacitive coupling and dielectric breakdown.

Innovation Solution

The semiconductor device incorporates a unique structure with a field plate electrode and insulating portions, including a void within the second insulating portion, which reduces capacitive coupling and enhances breakdown voltage by separating the gate electrode from the conductive portion, thereby improving switching speed and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the gate electrode is separated from the conductive portion using insulating portions including a void, then capacitive coupling is reduced and breakdown voltage is enhanced, but device complexity increases

Engineering Contradiction:

Improvebreakdown voltageVSAvoiddevice complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The gate electrode is divided into multiple gate electrode portions (first gate electrode portion, second gate electrode portion, third gate electrode portion) that are spatially separated and independently positioned over different semiconductor regions. This segmentation allows each portion to function independently, reducing capacitive coupling while maintaining breakdown voltage through optimized electric field distribution.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Insulating portions are introduced as intermediary elements between the gate electrode portions and the conductive portion. These insulating portions include a void region that electrically isolates the gate electrode from the conductive portion, thereby reducing parasitic capacitive coupling while maintaining electrical integrity through controlled field distribution.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Speed

If insulating portions with voids are introduced to reduce capacitive coupling, then switching speed improves, but manufacturing complexity increases

Engineering Contradiction:

Improveswitching speedVSAvoidmanufacturing complexity

Core Design Contradiction:

SpeedVSEase of manufacture

Solution Approach 1:

The insulating portions including void regions are formed preliminarily during the fabrication process before final device assembly. This preliminary formation of insulating structures with controlled voids enables subsequent gate electrode positioning and reduces parasitic capacitance from the outset, improving switching speed while managing manufacturing complexity through integrated process design.

Inventive Principle:

Principle #10Preliminary action

3Use of energy by moving object

If the gate electrode portions are separated to reduce capacitive coupling, then power consumption decreases, but device structure becomes more complex

Engineering Contradiction:

Improvepower consumptionVSAvoiddevice structure

Core Design Contradiction:

Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The gate electrode is segmented into multiple independent portions positioned over different semiconductor regions, which reduces capacitive coupling and associated power consumption during switching operations. Each segmented portion can be independently optimized for its specific function, reducing overall energy loss while managing structural complexity through modular design.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces switching losses, enhances reliability by suppressing dielectric breakdown, and maintains high breakdown voltage, thereby improving the overall performance of the semiconductor device.

Implementation Method 1

reduces capacitive coupling and enhances breakdown voltage by separating the gate electrode from the conductive portion

Methodology Applied

Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS10840368B2Semiconductor device

Publication Date: 2020.11.17 KK TOSHIBA

AI summary

According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region, second semiconductor regions, third semiconductor regions, a first conductive portion, a gate electrode, and a second electrode. The gate electrode includes a first electrode portion and a second electrode portion. The first electrode portion opposes a portion of the first semiconductor region, one of the second semiconductor regions, and one of the third semiconductors in a first direction perpendicular to a second direction. The second electrode portion is located between the first electrode portion and another one of the third semiconductor regions in the first direction. The second electrode portion opposes another portion of the first semiconductor region, another one of the second semiconductor regions, and the other one of the third semiconductor regions. A second insulating portion including a void is provided between the first electrode portion and the second electrode portion.